category: Blogs – MD

category: IoT, Security & Automotive

Identifying DRAM Failures Caused By Leakage Current And Parasitic Capacitance
By Taeyon (TY) Oh - 03 Feb, 2020 - Comments: 0

Leakage current has been a leading cause of device failure in DRAM design, starting with the 20nm technology node. Problems with leakage current in DRAM design can lead to reliability issues, even when there are no obvious structural abnormalities in the underlying device. Leakage current has become a critically important component in DRAM device design. Fig. 1 (a) DRAM Memory Cell, (b) GI... » read more

AI And Big Data Set To Reinvent Semiconductor Industry
By Regina Freed - 23 Jan, 2020 - Comments: 0

The recent IEEE International Electron Devices Meeting (IEDM) reaffirmed that the semiconductor industry is in a period of reinvention as we grapple with the challenges and opportunities promised by the Internet of Things (IoT), Big Data and AI. That such change is underway was made evident by a panel I was honored to moderate titled, “The Future of Logic: EUV is Here, Now What?” Joining... » read more

Semiconductor Equipment Growth Resumes For 2020
By Walt Custer - 23 Jan, 2020 - Comments: 0

The December Global Purchasing Managers Index was in zero growth territory (PMI = 50). However, the various country components varied significantly. With IHS Markit PMI data as a gauge of manufacturing activity, following are how some key electronics-producing countries and regions finished 2019. World Manufacturing Growth Flat to Start 2020 (Chart 1) To quote IHS Markit’s chief eco... » read more

An Introduction To Semiconductor Process Modeling
By Jeonghoon (James) Kim - 20 Dec, 2019 - Comments: 0

Semiconductor process engineers would love to develop successful process recipes without the guesswork of repeated wafer testing. Unfortunately, developing a successful process can’t be done without some work. This blog will discuss an efficient technique to develop new process steps faster, with much less effort. Basic concept The easiest way to predict a process result is to model its b... » read more

Co-Design For The AI Era
By Buvna Ayyagari-Sangamalli - 17 Dec, 2019 - Comments: 0

Welcome to the second piece in our blog series examining how the computing industry can work in new ways to enable the AI Era. In our first blog, my colleague Ellie Yieh described the enormous opportunities and challenges facing the industry as we enter a new decade, and she offered a path for accelerating innovation—from materials to systems—based on a “New Playbook” for driving im... » read more

A Promising Future For Interconnect IP
By Rich Wawrzyniak - 17 Dec, 2019 - Comments: 0

Complexity of SoC designs continues to increase primarily due to increased demand for functionality and performance in all electronic devices. Studies that Semico Research has conducted on the SoC design landscape shows the number of discrete SIP blocks has continued to rise in response to increased market requirements from new applications and richer feature sets. Table 1: Comparison of 1st... » read more

Sandia’s Fab Gets An Upgrade
By Nishita Rao - 17 Dec, 2019 - Comments: 0

Sandia National Laboratories just finished updating equipment in its microelectronics fab, marking the completion of the first phase of a 3-year fab upgrade program. The transition from 6-inch to 8-inch wafer sizes will align the Department of Energy national lab with industry standards to ensure easier access to tools, spare parts and raw materials. Sandia is a prestigious member of the... » read more

RF GaN Gains Steam
By Mark LaPedus - 21 Nov, 2019 - Comments: 0

Wide-bandgap semiconductors are hot topics these days. One wide-bandgap semi type--silicon carbide (SiC)--is the talk of the town and is gaining steam in electric vehicles and other systems. But let’s not forget about gallium nitride (GaN). GaN, a binary III-V material, has 10 times the breakdown field strength with double the electron mobility than silicon. GaN is used for LEDs, power ... » read more

Weighing Wafers Simplifies Metrology
By Jiangtao Hu - 21 Nov, 2019 - Comments: 2

Building semiconductors is an incredibly exacting process, with critical dimensions posing significant equipment challenges – and with the possibility that small process excursions can cause the yield to decrease. For this reason, it has always been important to measure and monitor the most critical process steps to ensure that no further processing is done on a faulty lot and so that equipme... » read more

A Study Of Next-Generation CFET Process Integration Options
By Benjamin Vincent - 21 Nov, 2019 - Comments: 0

Decision making is a critical step in semiconductor technology development. R&D semiconductor engineers must consider different design and process options early in the development of a next-generation technology. Established techniques such as Failure Mode and Effect Analysis (FMEA) can be used to select among the most promising design and process choices. Once specific design and process m... » read more

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