NIST Releases “Vision And Strategy for the National Semiconductor Technology Center”


A paper titled "A Vision and Strategy for the National Semiconductor Technology Center" was published by the U.S. Department of Commerce’s National Institute of Standards and Technology (NIST). The paper describes how the NSTC (National Semiconductor Technology Center) will develop and safeguard chips and technologies of the future. “The NSTC will be an ambitious public-private consortiu... » read more

New Low-Temp Growth & Fabrication Technology Allowing Integration of 2D Materials Directly Onto A Silicon Circuit (MIT)


A new technical paper titled "Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform" was published by researchers at MIT, Oak Ridge National Laboratory, and Ericsson Research. According to this MIT news article: "Growing 2D materials directly onto a silicon CMOS wafer has posed a major challenge because the process u... » read more

Split Additive Manufacturing for Printed Neuromorphic Circuits (Karlsruhe Institute of Technology)


A new technical paper titled "Split Additive Manufacturing for Printed Neuromorphic Circuits" was published by researchers at Karlsruher Institut für Technologie (KIT). Abstract: "Printed and flexible electronics promises smart devices for application domains, such as smart fast moving consumer goods and medical wearables, which are generally untouchable by conventional rigid silicon tech... » read more

GaN Power Devices: Stability, Reliability and Robustness Issues


A technical paper titled "Stability, Reliability, and Robustness of GaN Power Devices: A Review" was published by researchers at Virginia Polytechnic Institute and State University, Johns Hopkins University Applied Physics Laboratory, and Kyushu University. "Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, t... » read more

Using The Schottky Barrier Transistor in Various Applications & Material Systems


A new technical review paper titled "The Schottky barrier transistor in emerging electronic devices" was published by researchers at THM University of Applied Sciences, Chalmers University of Technology, CNRS, University Grenoble Alpes and others. Abstract "This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of... » read more

Optimizing The Growth And Transfer Process of Graphene (Cambridge, RWTH Aachen)


A technical paper titled "Putting High-Index Cu on the Map for High-Yield, Dry-Transferred CVD Graphene" was published by researchers at University of Cambridge, RWTH Aachen University, and National Institute for Materials Science. Abstract: "Reliable, clean transfer and interfacing of 2D material layers are technologically as important as their growth. Bringing both together remains a ch... » read more

CDSAXS Milestones And Future Growth of X-ray-Based Metrology for 3D Nanostructures Important To Chip Industry


A new technical paper titled "Review of the key milestones in the development of critical dimension small angle x-ray scattering at National Institute of Standards and Technology." Abstract: "An x-ray scattering based metrology was conceived over 20 years ago as part of a collaboration between National Institute of Standards and Technology (NIST) and International Business Machines Corporat... » read more

Quantum Light Source Fully Integrated On A Chip


A new technical paper titled "Quantum light source goes fully on-chip, bringing scalability to the quantum cloud" was published by researchers at Leibniz University Hannover, University of Twente and QuiX Quantum. Abstract: "Integrated photonics has recently become a leading platform for the realization and processing of optical entangled quantum states in compact, robust and scalable chip ... » read more

EUV Lithography: Results of Single Particle Volume Charging Processes in EUV Exposure Environment With Focus On Afterglow Effects


A new technical paper titled "Particle charging during pulsed EUV exposures with afterglow effect" was published by researchers at ASML, ISTEQ B.V., and Eindhoven University of Technology. Abstract "The nanoparticle charging processes along with background spatial-temporal plasma profile have been investigated with 3DPIC simulation in a pulsed EUV exposure environment. It is found that the ... » read more

Vertical Nanowire Gate-All-Around FETs based on the GeSn-Material System Grown on Si


A new technical paper titled "Vertical GeSn nanowire MOSFETs for CMOS beyond silicon" was published by researchers at Peter Grünberg Institute 9, JARA, RWTH Aachen University, CEA, LETI, University of Grenoble Alpes, University of Leeds, and IHP. "Here, we present high performance, vertical nanowire gate-all-around FETs based on the GeSn-material system grown on Si. While the p-FET transcon... » read more

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