Power Semiconductor Devices: Thermal Management and Packaging


A technical paper titled "Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective" was published by researchers at Virginia Polytechnic Institute and State University, U.S. Naval Research Laboratory, and Univ Lyon, CNRS. "This paper provides a timely review of the thermal management of WBG and UWBG power devices with an emphasis on packaged dev... » read more

Ferroelectric Polarization in an Elementary Substance or Single-Element Compound


A technical paper titled "Two-dimensional ferroelectricity in a single-element bismuth monolayer" was published by researchers at National University of Singapore, Zhejiang University, Tianjin University, and University of Chinese Academy of Sciences. Abstract "Ferroelectric materials are fascinating for their non-volatile switchable electric polarizations induced by the spontaneous inversi... » read more

Surface-Activated ALD For Room-Temperature Bonding of Al2O3


A new technical paper titled "Room-temperature bonding of Al2O3 thin films deposited using atomic layer deposition" was published by researchers at Kyushu University. Abstract "In this study, room-temperature wafer bonding of Al2O3 thin films on Si thermal oxide wafers, which were deposited using atomic layer deposition (ALD), was realized using the surface-activated bonding (SAB) metho... » read more

Characteristics of Three-Gated Reconfigurable FETs


A new technical paper titled "Insights into the Temperature Dependent Switching Behaviour of Three-Gated Reconfigurable Field Effect Transistors" was published by researchers at NaMLAB and TU Dresden. "In this work, it is possible to assess the performances of Three-Gated Reconfigurable Field Effect Transistors within a considerable temperature span and finally provide significant insights o... » read more

Large Area Process For Atomically Thin 2D Semiconductor, Using Scalable ALD


A new technical paper titled "Large-area synthesis of high electrical performance MoS2  by a commercially scalable atomic layer deposition process" by researchers at the University of Southampton, LMU Munich, and VTT Technical Research Centre of Finland. Abstract: "This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required... » read more

Photonics: GaSb/SiN Tunable Hybrid Integrated Laser


A new technical paper titled "Widely tunable 2 µm hybrid laser using GaSb semiconductor optical amplifiers and a Si3N4 photonics integrated reflector" was published by researchers at Tampere University in Finland. Abstract: "Tunable lasers emitting in the 2–3 µm wavelength range that are compatible with photonic integration platforms are of great interest for sensing applications. To ... » read more

Innovations in Device Design of The Gate-All-Around (GAA) Nanosheet FETs (IBM Research)


A technical paper titled "A Review of the Gate-All-Around Nanosheet FET Process Opportunities" was published by researchers at IBM Research Albany. Abstract: "In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET are reviewed. These innovations span enablement of multiple threshold voltages and bottom dielectric isolation in addition to impact of channel... » read more

Integrating MEMS with Standardized Silicon Photonics Technology


A new technical paper titled "Integrated silicon photonic MEMS" was published by researchers at EPFL, University of Sydney, CSEM, KTH Royal Institute of Technology, Ghent University, Imec, and Tyndall National Institute. Abstract Excerpt "Here, we introduce a silicon photonic MEMS platform consisting of high-performance nano-opto-electromechanical devices fully integrated alongside standar... » read more

New Spintronics Manufacturing Process, Allowing Scaling Down To Sub-5nm (U. of Minnesota/NIST)


A new technical paper titled "Sputtered L10-FePd and its Synthetic Antiferromagnet on Si/SiO2 Wafers for Scalable Spintronics" was published by researchers at University of Minnesota and NIST, with funding by DARPA and others. According to a University of Minnesota summary news article, "The industry standard spintronic material, cobalt iron boron, has reached a limit in its scalability. The... » read more

Room-Temperature Metal Bonding Technology That Facilitates The Fabrication of 3D-ICs & 3D Integration With Heterogeneous Devices


A technical paper titled "Room-Temperature Direct Cu Semi-Additive Plating (SAP) Bonding for Chip-on-Wafer 3D Heterogenous Integration With μLED" was published by researchers at Tohoku University in Japan. Abstract: "This letter describes a direct Cu bonding technology to there-dimensionally integrate heterogeneous dielets based on a chip-on-wafer configuration. 100- μm -cubed blue μ LED... » read more

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