High-Voltage, High-Current Electrical Switching Discharge Synthesis of ZnO Nanorods: A New Method toward Rapid and Highly Tunable Synthesis of Oxide Semiconductors in Open Air and Water for Optoelectronic Applications


Abstract: "A novel method of oxide semiconductor nanoparticle synthesis is proposed based on high-voltage, high-current electrical switching discharge (HVHC-ESD). Through a subsecond discharge in the HVHC-ESD method, we successfully synthesized zinc oxide (ZnO) nanorods. Crystallography and optical and electrical analyses approve the high crystal-quality and outstanding optoelectronic charac... » read more

Sputtered transparent electrodes for optoelectronic devices: Induced damage and mitigation strategies


Abstract: Summary "Transparent electrodes and metal contacts deposited by magnetron sputtering find applications in numerous state-of-the-art optoelectronic devices, such as solar cells and light-emitting diodes. However, the deposition of such thin films may damage underlying sensitive device layers due to plasma emission and particle impact. Inserting a buffer layer to shield against such da... » read more

Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content


Abstract "InGaN/GaN quantum wells (QWs) with sub-nanometer thickness can be employed in short-period superlattices for bandgap engineering of efficient optoelectronic devices, as well as for exploiting topological insulator behavior in III-nitride semiconductors. However, it had been argued that the highest indium content in such ultra-thin QWs is kinetically limited to a maximum of 33%, narro... » read more

Data-driven Scheduling for High-mix and Low-volume Production in Semiconductor Assembly and Testing


Abstract: The objective of this research is to improve scheduling decisions in high-mix low-volume (HMLV) production environments. Unique characteristics of HMLV semiconductor assembly and testing operations include: (1) Diversified Product Lines: To respond to global competition and different customer needs, manufacturers are providing diversified products to different consumers; (2) Unrelate... » read more

Roadmap on organic–inorganic hybrid perovskite semiconductors and devices


ABSTRACT Metal halide perovskites are the first solution processed semiconductors that can compete in their functionality with conventional semiconductors, such as silicon. Over the past several years, perovskite semiconductors have reported breakthroughs in various optoelectronic devices, such as solar cells, photodetectors, light emitting and memory devices, and so on. Until now, perovskit... » read more

Energy-efficient memcapacitor devices for neuromorphic computing


Abstract Data-intensive computing operations, such as training neural networks, are essential for applications in artificial intelligence but are energy intensive. One solution is to develop specialized hardware onto which neural networks can be directly mapped, and arrays of memristive devices can, for example, be trained to enable parallel multiply–accumulate operations. Here we show that ... » read more

Standards for the Characterization of Endurance in Resistive Switching Devices


Abstract "Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to... » read more

Research on Wire Sweep of Integrated Circuit Packaging Based on Three-dimensional Flow Simulation


Abstract: "Semiconductor manufacturing technology is becoming more and more rapidly. In the process of Integrated Circuit (IC) encapsulation, when wires contact each other, it will cause short circuit. Wire sweep has become the main factor affecting the reliability of the product. Therefore, it is a great challenge to master wire sweep in IC packaging process. This paper takes Low Profile Fi... » read more

Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: implementable in error-correctable large-scale quantum computers


Abstract: "We propose a buried nanomagnet (BNM) realizing highspeed/low-variability silicon spin qubit operation, inspired by buried wiring technology, for the first time. High-speed quantum-gate operation results from large slanting magnetic-field generated by the BNM disposed quite close to a spin qubit, and low-variation of fidelity thanks to the self-aligned fabrication process. Employing ... » read more

Uniform Spin Qubit Devices with Tunable Coupling in an All-Silicon 300 mm Integrated Process


Abstract: Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 300K down to mK temperatures. This is achieved, for the first time, by integrating an overlapping polycrystalline silicon-based gate stack in an ‘all-Silicon’ and lithographically flexible 300mm flow. ... » read more

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