Chiplet-Based Advanced Packaging Technology from 3D/TSV to FOWLP/FHE


T. Fukushima, "Chiplet-Based Advanced Packaging Technology from 3D/TSV to FOWLP/FHE," 2021 Symposium on VLSI Circuits, 2021, pp. 1-2, doi: 10.23919/VLSICircuits52068.2021.9492335. Abstract: "More recently, "chiplets" are expected for further scaling the performance of LSI systems. However, system integration with the chiplets is not a new methodology. The basic concept dates back well over ... » read more

Plasma processing for advanced microelectronics beyond CMOS


N. Marchack, L. Buzi, D. B. Farmer, H. Miyazoe, J. M. Papalia, H. Yan, G. Totir, and S. U. Engelmann , "Plasma processing for advanced microelectronics beyond CMOS", Journal of Applied Physics 130, 080901 (2021) https://doi.org/10.1063/5.0053666 ABSTRACT "The scientific study of plasma discharges and their material interactions has been crucial to the development of semiconductor process en... » read more

High-performance flexible nanoscale transistors based on transition metal dichalcogenides


Read the paper here. Published June 17, 2021, Nature Electronics. Abstract Two-dimensional (2D) semiconducting transition metal dichalcogenides could be used to build high-performance flexible electronics. However, flexible field-effect transistors (FETs) based on such materials are typically fabricated with channel lengths on the micrometre scale, not benefitting from the short-channel advan... » read more

Marangoni Effect-Based Under-Layer For A Dual Damascene Via-First Approach


One of the main challenges of a Dual Damascene (DD) via-first process is the control of the Critical Dimensions (CDs) in the lithography of the trenches. The PhotoResist (PhR) thickness presents variations from the via arrays to the open areas, which cause the variation of CDs: the swing effect. The planarization of a DD via-first process is reported. A dual-layer solution is used to demonst... » read more

Intelligent Agents for the Optimization of Atomic Layer Deposition


"Atomic layer deposition (ALD) is a highly controllable thin film synthesis approach with applications in computing, energy, and separations. The flexibility of ALD means that it can access a massive chemical catalogue; however, this chemical and process diversity results in significant challenges in determining processing parameters that result in stable and uniform film growth with minimal pr... » read more

Extremely Large Exposure Field w/Fine Resolution Lithography Tech To Enable Next-Gen Panel Level Advanced Packaging


Abstract—"The growing demand for heterogeneous integration is driven by the 5G market that includes smartphones, data centers, servers, HPC, AI and IoT applications. Next-generation packaging technologies require tighter overlay to accommodate a larger package size with finer pitch chip interconnects on large format flexible panels. Heterogeneous integration enables next-generation device per... » read more

Tailoring spatial entropy in EUV focused beams for multispectral ptychography


The Advanced Research Center for Nanolithography (ARCNL) and Vrije Universiteit Amsterdam have developed a new class of diffractive optical elements that paves the way towards more widespread use of EUV microscopy. Abstract "Diffractive optics can be used to accurately control optical wavefronts, even in situations where refractive components such as lenses are not available. For instance, c... » read more

Emergent magnetic monopoles isolated using quantum-annealing computer


Using D-Wave’s quantum-annealing computer, Los Alamos National Laboratory has shown that it’s possible to isolate magnetic monopoles. This research could one day enable future nanomagnets.   Abstract: "Artificial spin ices are frustrated spin systems that can be engineered, wherein fine tuning of geometry and topology has allowed the design and characterization of exotic eme... » read more

Underlayer Optimization Method For EUV Lithography


Photoresist and underlayer combine to serve a central role in EUVL for patterning. Layers will be very thin in future, because high numerical aperture (NA) and tight pitches will require very thin layers in the lithography stack. This thinness will make chemical interactions at the photoresist-underlayer interface more common. Adhesion between these layers will be critical to overcome pattern c... » read more

High-Temperature-Stable, Spin-On Carbon Materials For High-Aspect-Ratio Gap-Fill Applications


Brewer Science, Inc. has developed a class of novel, high-temperature-stable spin-on carbon (SOC)-based materials with excellent processability. These SOCs are cured under mild conditions and have flow properties that enable the fill of high-aspect-ratio vias in a void-free manner. Moreover, this new class of SOCs has remarkable thermal stability and can survive temperatures of up to 550°C wit... » read more

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