A Polymer-Free Technique For Assembling Van Der Waals Heterostructures Using Flexible Si Nitride Membranes


A technical paper titled “Clean assembly of van der Waals heterostructures using silicon nitride membranes” was published by researchers at University of Manchester, Imperial College London, National Institute for Materials Science (Japan), and University of Lancaster. Abstract Van der Waals heterostructures are fabricated by layer-by-layer assembly of individual two-dimensional mater... » read more

2D Computing Magnets For Temperatures Up To 170-Degrees Fahrenheit


A technical paper titled “Magnetic properties of intercalated quasi-2D Fe3-xGeTe2 van der Waals magnet” was published by researchers at University of Texas at El Paso, National Institute of Standards and Technology (NIST), University of Edinburgh, Donostia International Physics Centre (DIPC), Hampton University, and Brookhaven National Laboratory. Abstract: "Among several well-kno... » read more

How Different Metal Depositions Affect The Structure And Charge Transport Of 9-A Graphene Nanoribbons


A technical paper titled “Contact engineering for graphene nanoribbon devices” was published by researchers at University of Arizona, Swiss Federal Labs for Materials Science and Technology, University of California Berkeley, Stanford University, SRM Institute of Science and Technology, Texas A&M University, Lawrence Berkeley National Laboratory (LBNL), Max Planck Institute for Polymer... » read more

Deep Learning Discovers Millions Of New Materials (Google)


A technical paper titled “Scaling deep learning for materials discovery” was published by researchers at Google DeepMind and Google Research. Abstract: "Novel functional materials enable fundamental breakthroughs across technological applications from clean energy to information processing. From microchips to batteries and photovoltaics, discovery of inorganic crystals has been bottleneck... » read more

A Novel Way To Stretch Diamond For Better Quantum Bits


A technical paper titled “Microwave-Based Quantum Control and Coherence Protection of Tin-Vacancy Spin Qubits in a Strain-Tuned Diamond-Membrane Heterostructure” was published by researchers at University of Chicago, University of Cambridge, Argonne National Laboratory, and Delft University of Technology. Abstract: "Robust spin-photon interfaces in solids are essential components in quant... » read more

Tapping 2D van der Waals Ferroelectrics For Use In Next-Generation Electronics


A technical paper titled “Domain-dependent strain and stacking in two-dimensional van der Waals ferroelectrics” was published by researchers at Rice University, Massachusetts Institute of Technology, University of Texas at Arlington, Texas A&M University, and Pennsylvania State University. Abstract: "Van der Waals (vdW) ferroelectrics have attracted significant attention for their pot... » read more

Diamond Semiconductor: Highest Breakdown Voltage, Lowest Leakage Current


A technical paper titled "Diamond p-Type Lateral Schottky Barrier Diodes With High Breakdown Voltage (4612 V at 0.01 mA/Mm)" was published by researchers at University of Illinois at Urbana–Champaign. Abstract "Diamond p-type lateral Schottky barrier diodes (SBDs) with a 2- μm -thick drift layer are fabricated with and without Al2O3 field plates. Schottky contacts composed of Mo (50 nm) ... » read more

Front-end patterning and epitaxy approach on Si photonics 220nm SOI substrates


A new technical paper titled "Lateral Tunnel Epitaxy of GaAs in Lithographically Defined Cavities on 220 nm Silicon-on-Insulator" was published by researchers at Cardiff University and University of Southampton. Abstract "Current heterogeneous Si photonics usually bond III–V wafers/dies on a silicon-on-insulator (SOI) substrate in a back-end process, whereas monolithic integration by di... » read more

Lateral 3 kV AlN SBDs on Bulk AlN Substrates By MOCVD


A new technical paper titled "3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD" was published by researchers at Arizona State University. Abstract "This letter reports the first demonstration of AlN Schottky diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying char... » read more

Investigating Subthreshold Current Suppression in ReS2 Nanosheet-Based FETs


A technical paper titled “Subthreshold Current Suppression in ReS2 Nanosheet-Based Field-Effect Transistors at High Temperatures” was published by researchers at University of Salerno, Università degli studi del Sannio, and University of Exeter. Abstract: "Two-dimensional rhenium disulfide (ReS2), a member of the transition-metal dichalcogenide family, has received significant attention... » read more

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