New Class Of Materials With Increased Band Gap (U. of Minnesota, Caltech)


A new technical paper titled "Deep-ultraviolet transparent conducting SrSnO3 via heterostructure design" was published by researchers at University of Minnesota–Twin Cities and Caltech. The researchers "looked at creating a new class of materials with increased “band gap,” enhancing both transparency and conductivity. The new material is a transparent conducting oxide, created with a s... » read more

Visualization of Photoexcited Charges Moving Across the Interface of Si/Ge


A technical paper titled "Imaging hot photocarrier transfer across a semiconductor heterojunction with ultrafast electron microscopy" was published by researchers at UC Santa Barbara and UCLA. "In this work, we apply scanning ultrafast electron microscopy to provide a holistic view of photoexcited charge dynamics in a Si/Ge heterojunction. We find that the built-in potential and the band off... » read more

Energy Storage: Properties of Barium Titanate (Harvey Mudd)


A technical paper titled "Understanding surfaces and interfaces in nanocomposites of silicone and barium titanate through experiments and modeling" was published by researchers at Harvey Mudd College, Sandia National Lab and Air Force Research Laboratory. Abstract "Barium titanate (BTO) is a ferroelectric perovskite used in electronics and energy storage systems because of its high dielectr... » read more

Review of Advances in 3D integration of 2D Neuromorphic Electronics, Materials to Systems


A new technical paper titled "2D materials-based 3D integration for neuromorphic hardware" was published by researchers at  Seoul National University and University of Southern California. Find the technical paper here. November 2024. Kim, S.J., Lee, HJ., Lee, CH. et al. 2D materials-based 3D integration for neuromorphic hardware. npj 2D Mater Appl 8, 70 (2024). https://doi.org/10.10... » read more

Recent Progress in Inorganic Metal-Oxide-Based Photoresists For EUVL


A technical paper titled "Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography" was published by researchers at University of South–Eastern Norway. Abstract: "Extreme ultraviolet lithography (EUVL) is a leading technology in semiconductor manufacturing, enabling the creation of high-resolution patterns essential for advanced microelectronics. This review highlights recent... » read more

PCM-Based Photonic Memory Cells: Design-Space Exploration And Performance Comparisons


A technical paper titled "Programmable phase change materials and silicon photonics co-integration for photonic memory applications: a systematic study" was published by researchers at Colorado State University, CEA-LETI, and UC Berkeley. Find the technical paper here. August 2024. "We delve into the performance comparison of PCM-based programmable photonic memory cells based on silicon p... » read more

Current and Emerging Heterogeneous Integration Technologies For High-Performance Systems (Georgia Tech)


A technical paper titled "Heterogeneous Integration Technologies for Artificial Intelligence Applications" was published by Georgia Tech. Abstract "The rapid advancement of artificial intelligence (AI) has been enabled by semiconductor-based electronics. However, the conventional methods of transistor scaling are not enough to meet the exponential demand for computing power driven by AI. ... » read more

Characterizing Defects Inside Hexagonal Boron Nitride (KAIST, NYU, et al.)


A new technical paper titled "Characterizing Defects Inside Hexagonal Boron Nitride Using Random Telegraph Signals in van der Waals 2D Transistors" was published by researchers at KAIST, NYU, Brookhaven National Laboratory, and National Institute for Materials Science. Abstract: "Single-crystal hexagonal boron nitride (hBN) is used extensively in many two-dimensional electronic and quantu... » read more

New Approach to Encoding Optical Weights for In-Memory Photonic Computing Using Magneto-Optic Memory Cells


A new technical paper titled "Integrated non-reciprocal magneto-optics with ultra-high endurance for photonic in-memory computing" was published by researchers at UC Santa Barbara, University of Cagliari, University of Pittsburgh, AIST and Tokyo Institute of Technology. Abstract "Processing information in the optical domain promises advantages in both speed and energy efficiency over existi... » read more

Scalability of Nanosheet Oxide FETs for Monolithic 3-D Integration


A new technical paper titled "High-Field Transport and Statistical Variability of Nanosheet Oxide Semiconductor FETs With Channel Length Scaling" was published by researchers at The University of Tokyo and Nara Institute of Science and Technology. Abstract "We have investigated the scaling potential of nanosheet oxide semiconductor FETs (NS OS FETs) for monolithic 3-D (M3D) integration in t... » read more

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