category: Materials

category: IoT, Security & Automotive

State Of The Art And Recent Progress of Reconfigurable Electronic Devices Based on 2D Materials
By Technical Paper Link - 24 Aug, 2022 - Comments: 0

A new technical paper titled "Emerging reconfigurable electronic devices based on two-dimensional materials: A review" was just published by researchers at TU Dresden, NaMLAb gGmbH, and RWTH Aachen University. Abstract "As the dimensions of the transistor, the key element of silicon technology, are approaching their physical limits, developing semiconductor technology with novel concepts an... » read more

Biocompatible Bilayer Graphene-Based Artificial Synaptic Transistors (BLAST) Capable of Mimicking Synaptic Behavior
By Technical Paper Link - 10 Aug, 2022 - Comments: 0

This new technical paper titled "Metaplastic and energy-efficient biocompatible graphene artificial synaptic transistors for enhanced accuracy neuromorphic computing" was published by researchers at The University of Texas at Austin and Sandia National Laboratories. Abstract "CMOS-based computing systems that employ the von Neumann architecture are relatively limited when it comes to para... » read more

All-Solid-State Batteries: Substantial Deterioration of ASSBs Can Occur After High-Temperature Storage
By Technical Paper Link - 04 Aug, 2022 - Comments: 0

New technical paper titled "Detrimental effect of high-temperature storage on sulfide-based all-solid-state batteries" was just published by researchers at Seoul National University, National Synchrotron Radiation Research Center (Taiwan), and Battery Material Lab at the Samsung Advanced Institute of Technology. According to this AIP article, "The team found storage as low as 70 degrees Cels... » read more

Fully CMOS-compatible Ternary Inverter with a Memory Function Using Silicon Feedback Field-Effect Transistors (FBFETs)
By Technical Paper Link - 02 Aug, 2022 - Comments: 0

New technical paper titled "New ternary inverter with memory function using silicon feedback field-effect transistors" was published from researchers at Korea University. Abstract: In this study, we present a fully complementary metal–oxide–semiconductor-compatible ternary inverter with a memory function using silicon feedback field-effect transistors (FBFETs). FBFETs operate with a pos... » read more

Ultra-Fast Photonic Computing Using Polarization
By Technical Paper Link - 02 Aug, 2022 - Comments: 0

New technical paper titled "Polarization-selective reconfigurability in hybridized-active-dielectric nanowires" was recently published by researchers at University of Oxford and University of Exeter.  The paper demonstrates "the ability to use polarization as a parameter to selectively modulate the conductance of individual nanowires within a multi-nanowire system. By using polarization as the... » read more

Define & Grow III–V Vertical Nanowires At A High Footprint Density on a Si Platform
By Technical Paper Link - 29 Jul, 2022 - Comments: 0

New technical paper titled "Directed Self-Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All-Around Deposition" is published from researchers at Lund University in Sweden. Abstract: "Fabrication of next generation transistors calls for new technological requirements, such as reduced size and increased density of structures. Development of cost-effective proc... » read more

Analog Deep Learning Processor (MIT)
By Technical Paper Link - 29 Jul, 2022 - Comments: 0

A team of researchers at MIT are working on hardware for artificial intelligence that offers faster computing with less power. The analog deep learning technique involves sending protons through solids at extremely fast speeds.  “The working mechanism of the device is electrochemical insertion of the smallest ion, the proton, into an insulating oxide to modulate its electronic conductivity... » read more

Cubic Boron Arsenide’s Unique Semiconducting Properties (MIT)
By Technical Paper Link - 22 Jul, 2022 - Comments: 0

New research claims cubic boron arsenide could be a “game-changing” semiconductor with a “very high mobility for both electrons and holes,” according to this MIT article. “Heat is now a major bottleneck for many electronics,” says Shin, the paper’s lead author. “Silicon carbide is replacing silicon for power electronics in major EV industries including Tesla, since it has thr... » read more

Split-Gate FETs (SG-FETs)
By Technical Paper Link - 21 Jul, 2022 - Comments: 0

This technical paper titled "Longitudinal and latitudinal split-gate field-effect transistors for NAND and NOR logic circuit applications" was published by researchers at Department of Electrical and Computer Engineering, Inha University (South Korea) and Korea Institute of Science and Technology (KIST), Seoul. Abstract "Two-dimensional (2D) materials have been extensively adopted in variou... » read more

Film Failure in Multilayer Systems for Semiconductor Devices
By Technical Paper Link - 18 Jul, 2022 - Comments: 0

Researchers at MIT, Yonsei University (Seoul, Korea) just published this technical paper titled "Interfacial Delamination at Multilayer Thin Films in Semiconductor Devices." According to the abstract "In this work, the effect of thermomechanical stress on the failure of multilayered thin films on Si substrates was studied using analytical calculations and various thermomechanical tests." ... » read more

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