A Practical DRAM-Based Multi-Level PIM Architecture For Data Analytics


A technical paper titled "Darwin: A DRAM-based Multi-level Processing-in-Memory Architecture for Data Analytics" was published by researchers at Korea Advanced Institute of Science & Technology (KAIST) and SK hynix Inc. Abstract: "Processing-in-memory (PIM) architecture is an inherent match for data analytics application, but we observe major challenges to address when accelerating it usi... » read more

A Hardware Accelerator Designed For The Homomorphic SEAL-Embedded Library


A technical paper titled "VLSI Design and FPGA Implementation of an NTT Hardware Accelerator for Homomorphic SEAL-Embedded Library" was published by researchers at University of Pisa. Abstract: "Homomorphic Encryption (HE) allows performing specific algebraic computations on encrypted data without the need for decryption. For this reason, HE is emerging as a strong privacy-preserving solution... » read more

Gallium Oxide Flash Memory (KAUST & IIT)


A technical paper titled "Demonstration of β-Ga2O3 nonvolatile flash memory for oxide electronics" was published by researchers at King Abdullah University of Science and Technology (KAUST) and Indian Institute of Technology. Abstract: "This report demonstrates an ultrawide bandgap β-Ga2O3 flash memory for the first time. The flash memory device realized on heteroepitaxial β-Ga2O3 film... » read more

Topological Semimetal Synthesized Thin Film That Can Increase Power and Memory Storage While Using Less Energy


A technical paper titled "Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt3Sn and Pt3SnxFe1-x topological semimetal" was published by researchers at University of Minnesota. Abstract: "Contrary to topological insulators, topological semimetals possess a nontrivial chiral anomaly that leads to negative magnetoresistance and are hosts to both conductive bulk ... » read more

RowPress: Read-Disturb Phenomenon In DDR4 DRAM Chips


A technical paper titled "RowPress: Amplifying Read Disturbance in Modern DRAM Chips" was published by researchers at ETH Zürich. Abstract: "Memory isolation is critical for system reliability, security, and safety. Unfortunately, read disturbance can break memory isolation in modern DRAM chips. For example, RowHammer is a well-studied read-disturb phenomenon where repeatedly opening and clo... » read more

Redox-Based Ionic Devices For High-Performance Neuromorphic Computing


A technical paper titled "A Redox-Based Ion-Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses" was published by researchers at National Institute for Materials Science (NIMS) and Tokyo University of Science. Abstract: "Herein, physical reservoir computing with a redox-based ion-gating reservoir (redox-IGR) comprising LixWO3 thin film and lithium-ion co... » read more

Capturing 2D Light Patterns Into DNA To Integrate Biological Systems Into a Living Digital Camera


A technical paper titled "A biological camera that captures and stores images directly into DNA" was published by researchers at National University of Singapore. Abstract: "The increasing integration between biological and digital interfaces has led to heightened interest in utilizing biological materials to store digital data, with the most promising one involving the storage of data within... » read more

How Voltage-Controlled MRAM Devices Can Be Used To Create Unique Fingerprints Of Microelectronic Chips


A technical paper titled "Reconfigurable Physically Unclonable Functions Based on Nanoscale Voltage-Controlled Magnetic Tunnel Junctions" was published by researchers at Northwestern University, Western Digital Corporation, Fe Research Inc., and University of Messina. Abstract: "With the fast growth of the number of electronic devices on the internet of things (IoT), hardware-based securi... » read more

DRAM Translation Layer, Mechanism for Flexible Address Mapping and Data Migration Within CXL-Based Memory Devices


A technical paper titled “DRAM Translation Layer: Software-Transparent DRAM Power Savings for Disaggregated Memory” was published by researchers at Seoul National University. Abstract: "Memory disaggregation is a promising solution to scale memory capacity and bandwidth shared by multiple server nodes in a flexible and cost-effective manner. DRAM power consumption, which is reported to be... » read more

Resistive Switching Memory Based on Thin-Film Design of Amorphous Hafnium Oxide (Cambridge & Others)


A technical paper titled “Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity” was published by researchers at University of Cambridge, Linköping University, Purdue University, University College London, Los Alamos National Laboratory, and University at Buffalo. Abstract: "A design concept of phase-separated amorphous nano... » read more

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