A Ferroelectric Semiconductor Field-Effect Transistor


Abstract: "Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are potentially of use in non-volatile memory technology, but they suffer from short retention times, which limits their wider application. Here, we report a ferroelectric sem... » read more

Understanding the Interactions of Workloads and DRAM Types: A Comprehensive Experimental Study


Abstract "It has become increasingly difficult to understand the complex interaction between modern applications and main memory, composed of DRAM chips. Manufacturers are now selling and proposing many different types of DRAM, with each DRAM type catering to different needs (e.g., high throughput, low power, high memory density). At the same time, the memory access patterns of prevalent and... » read more

Checkmate: Breaking The Memory Wall With Optimal Tensor Rematerialization


Source: Published on arXiv 10/7/ 2019   Paras Jain Ajay Jain Aniruddha Nrusimha Amir Gholami Pieter Abbeel Kurt Keutzer Ion Stoica Joseph E. Gonzalez A recent paper published on arXiv by a team of UC Berkeley researchers notes that neural networks are increasingly impeded by the limited capacity of on-device GPU memory. The UC Berkeley team uses off-the-shel... » read more

Copy-Row DRAM (CROW) : Substrate for Improving DRAM


Source/Credit: ETH Zurich & Carnegie Mellon University Click here for the technical paper and here for the power point slides » read more

MRAM: from STT to SOT, for security and memory


Abstract: "Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is one of the leading candidates for embedded memory convergence in advanced technology nodes. It is particularly adapted to low-power applications, requiring a decent level of performance. However, it also have interests for secured applications. The PRESENT cipher is a lightweight cryptographic algorithm targeting ultra... » read more

Switching a Perpendicular Ferromagnetic Layer by Competing Spin Currents


ABSTRACT "An ultimate goal of spintronics is to control magnetism via electrical means. One promising way is to utilize a current-induced spin-orbit torque (SOT) originating from the strong spin-orbit coupling in heavy metals and their interfaces to switch a single perpendicularly magnetized ferromagnetic layer at room temperature. However, experimental realization of SOT switching to date req... » read more

Using Run-Time Reverse-Engineering to Optimize DRAM Refresh


Abstract: "The overhead of DRAM refresh is increasing with each density generation. To help offset some of this overhead, JEDEC designed the modern Auto-Refresh command with a highly optimized architecture internal to the DRAM---an architecture that violates the timing rules external controllers must observe and obey during normal operation. Numerous refresh-reduction schemes manually refresh ... » read more

Making high-capacity data caches more efficient


Source: Researchers from MIT, Intel, and ETH Zurich Xiangyao Yu (MIT), Christopher J. Hughes (Intel), Nadathur Satish (Intel) Onur Mutlu (ETH Zurich), Srinivas Devadas (MIT) Technical Paper link MIT News article As the transistor counts in processors have gone up, the relatively slow connection between the processor and main memory has become the chief impediment to improving comp... » read more

Memory Model Verification at the Trisection of Software, Hardware, and ISA (Princeton)


Source: Princeton University, Caroline Trippel, Yatin A. Manerkar, Daniel Lustig*, Michael Pellauer*, Margaret Martonosi *NVIDIA Princeton University researchers have discovered a series of errors in the RISC-V instruction specification that now are leading to changes in the new system, which seeks to facilitate open-source design for computer chips. In testing a technique they created for... » read more

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