The speed limit of optoelectronics


Abstract "Light-field driven charge motion links semiconductor technology to electric fields with attosecond temporal control. Motivated by ultimate-speed electron-based signal processing, strong-field excitation has been identified viable for the ultrafast manipulation of a solid’s electronic properties but found to evoke perplexing post-excitation dynamics. Here, we report on single-photon... » read more

Bell state analyzer for spectrally distinct photons


Abstract "We demonstrate a Bell state analyzer that operates directly on frequency mismatch. Based on electro-optic modulators and Fourier-transform pulse shapers, our quantum frequency processor design implements interleaved Hadamard gates in discrete frequency modes. Experimental tests on entangled-photon inputs reveal fidelities of ∼98% for discriminating between the |Ψ+⟩ and |Ψ−⟩... » read more

Experimental photonic quantum memristor


Abstract "Memristive devices are a class of physical systems with history-dependent dynamics characterized by signature hysteresis loops in their input–output relations. In the past few decades, memristive devices have attracted enormous interest in electronics. This is because memristive dynamics is very pervasive in nanoscale devices, and has potentially groundbreaking applications ranging... » read more

Wavelength Multiplexed Ultralow-Power Photonic Edge Computing


Abstract "Advances in deep neural networks (DNNs) are transforming science and technology. However, the increasing computational demands of the most powerful DNNs limit deployment on low-power devices, such as smartphones and sensors -- and this trend is accelerated by the simultaneous move towards Internet-of-Things (IoT) devices. Numerous efforts are underway to lower power consumption, but ... » read more

The resurrection of tellurium as an elemental two-dimensional semiconductor


Abstract "The graphene boom has triggered a widespread search for novel elemental van der Waals materials thanks to their simplicity for theoretical modeling and easy access for material growth. Group VI element tellurium is an unintentionally p-type doped narrow bandgap semiconductor featuring a one-dimensional chiral atomic structure which holds great promise for next-generation electronic, ... » read more

Programmable black phosphorus image sensor for broadband optoelectronic edge computing


Abstract "Image sensors with internal computing capability enable in-sensor computing that can significantly reduce the communication latency and power consumption for machine vision in distributed systems and robotics. Two-dimensional semiconductors have many advantages in realizing such intelligent vision sensors because of their tunable electrical and optical properties and amenability fo... » read more

Large-area photonic lift-off process for flexible thin-film transistors


Abstract "Fabricating flexible electronics on plastic is often limited by the poor dimensional stability of polymer substrates. To mitigate, glass carriers are used during fabrication, but removing the plastic substrate from a carrier without damaging the electronics remains challenging. Here we utilize a large-area, high-throughput photonic lift-off (PLO) process to rapidly separate polymer f... » read more

An achromatic X-ray lens


Abstract "Diffractive and refractive optical elements have become an integral part of most high-resolution X-ray microscopes. However, they suffer from inherent chromatic aberration. This has to date restricted their use to narrow-bandwidth radiation, essentially limiting such high-resolution X-ray microscopes to high-brightness synchrotron sources. Similar to visible light optics, one way t... » read more

Enhanced on-chip phase measurement by inverse weak value amplification


Abstract: "Optical interferometry plays an essential role in precision metrology such as in gravitational wave detection, gyroscopes, and environmental sensing. Weak value amplification enables reaching the shot-noise-limit of sensitivity, which is difficult for most optical sensors, by amplifying the interferometric signal without amplifying certain technical noises. We implement a generali... » read more

Interfacial ferroelectricity in marginally twisted 2D semiconductors


Abstract "Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of new metamaterials. Here we demonstrate a room temperature ferroelectric semiconductor that is assembled using mono- or few-layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of tw... » read more

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