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Electrically pumped laser transmitter integrated on thin-film lithium niobate

Researchers develop fully integrated high-power laser on a lithium niobate chip, paving the way for high-powered telecommunication systems, fully integrated spectrometers, optical remote sensing, and efficient frequency conversion for quantum networks, among other applications.

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New research paper from Harvard, in collaboration with Freedom Photonics and HyperLight Corp, and with funding from DARPA and Air Force Office of Scientific Research.

Abstract

“Integrated thin-film lithium niobate (TFLN) photonics has emerged as a promising platform for the realization of high-performance chip-scale optical systems. Of particular importance are TFLN electro-optic modulators featuring high-linearity, low driving voltage and low propagation loss. However, a fully integrated system requires integration of high power, low noise, and narrow linewidth lasers on TFLN chips. Here we achieve this goal, and demonstrate integrated high-power lasers on TFLN platform with up to 60 mW of optical power in the waveguides. We use this platform to realize a high-power transmitter consisting of an electrically pumped laser integrated with a 50 GHz modulator.”

Find the open access technical paper here. Published April 2022.  Find the Harvard summary article here.

Amirhassan Shams-Ansari, Dylan Renaud, Rebecca Cheng, Linbo Shao, Lingyan He, Di Zhu, Mengjie Yu, Hannah R. Grant, Leif Johansson, Mian Zhang, and Marko Lončar, “Electrically pumped laser transmitter integrated on thin-film lithium niobate,” Optica 9, 408-411 (2022).

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