Controlling Speckle Contrast Using Existing Lithographic Scanner Knobs to Understand LWR (Samsung, ASML)


A new technical paper titled "Controlling Speckle Contrast Using Existing Lithographic Scanner Knobs to Explore the Impact on Line Width Roughness" was published by researchers at Samsung, ASML and Sungkyunkwan University. Abstract "Local critical dimension uniformity (LCDU) or line width roughness (LWR) is increasingly important in argon fluoride (ArF) immersion lithography systems (scanne... » read more

Wafer Bin Map Defect Classification Using Semi-Supervised Learning


A new technical paper titled "Semi-Supervised Learning with Wafer-Specific Augmentations for Wafer Defect Classification" was published by researchers at Korea University. Abstract "Semi-supervised learning (SSL) models, which leverage both labeled and unlabeled datasets, have been increasingly applied to classify wafer bin map patterns in semiconductor manufacturing. These models typical... » read more

98 Hardware Security Failure Scenarios (NIST)


A new technical paper titled "Hardware Security Failure Scenarios: Potential Hardware Weaknesses" was published by NIST. Abstract "Hardware is often assumed to be robust from a security perspective. However, chips are both created with software and contain complex encodings (e.g., circuit designs and firmware). This leads to bugs, some of which compromise security. This publication evaluate... » read more

Monitor Etch Defects on Dies in the Outer Regions Of The Wafer Using ISR


A technical paper titled "Detection of defective chips from nanostructures with a high-aspect ratio using hyperspectral imaging and deep learning" was published by researchers at Samsung Electronics. Abstract: "We have developed an imaging spectroscopic reflectometry (ISR) method based on hyperspectral imaging and deep learning to detect defects in the bottom region of high-aspect-ratio nan... » read more

Visualization of Photoexcited Charges Moving Across the Interface of Si/Ge


A technical paper titled "Imaging hot photocarrier transfer across a semiconductor heterojunction with ultrafast electron microscopy" was published by researchers at UC Santa Barbara and UCLA. "In this work, we apply scanning ultrafast electron microscopy to provide a holistic view of photoexcited charge dynamics in a Si/Ge heterojunction. We find that the built-in potential and the band off... » read more

Characterizing Defects Inside Hexagonal Boron Nitride (KAIST, NYU, et al.)


A new technical paper titled "Characterizing Defects Inside Hexagonal Boron Nitride Using Random Telegraph Signals in van der Waals 2D Transistors" was published by researchers at KAIST, NYU, Brookhaven National Laboratory, and National Institute for Materials Science. Abstract: "Single-crystal hexagonal boron nitride (hBN) is used extensively in many two-dimensional electronic and quantu... » read more

Scalability of Nanosheet Oxide FETs for Monolithic 3-D Integration


A new technical paper titled "High-Field Transport and Statistical Variability of Nanosheet Oxide Semiconductor FETs With Channel Length Scaling" was published by researchers at The University of Tokyo and Nara Institute of Science and Technology. Abstract "We have investigated the scaling potential of nanosheet oxide semiconductor FETs (NS OS FETs) for monolithic 3-D (M3D) integration in t... » read more

Review of Automatic EM Image Algorithms for Semiconductor Defect Inspection (KU Leuven, Imec)


A new technical paper titled "Electron Microscopy-based Automatic Defect Inspection for Semiconductor Manufacturing: A Systematic Review" was published by researchers at KU Leuven and imec. Abstract: "In this review, automatic defect inspection algorithms that analyze Electron Microscope (EM) images of Semiconductor Manufacturing (SM) products are identified, categorized, and discussed. Thi... » read more

Strain Engineering in 2D FETs (UCSB)


A new technical paper titled "Strain engineering in 2D FETs: Physics, status, and prospects" was published by researchers at UC Santa Barbara. "In this work, we explore the physics and evaluate the merits of strain engineering in two-dimensional van der Waals semiconductor-based FETs (field-effect-transistors) using DFT (density functional theory) to determine the modulation of the channel m... » read more

Method To Determine The Permittivity of Dielectric Materials in 3D Integrated Structures At Broadband RF Frequencies


A new technical paper titled "Characterizing the Broadband RF Permittivity of 3D-Integrated Layers in a Glass Wafer Stack from 100 MHz to 30 GHz" was published by researchers at NIST. Abstract "We present a method for accurately determining the permittivity of dielectric materials in 3D integrated structures at broadband RF frequencies. With applications of microwave and millimeter-wave ele... » read more

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