Scalability of Nanosheet Oxide FETs for Monolithic 3-D Integration


A new technical paper titled "High-Field Transport and Statistical Variability of Nanosheet Oxide Semiconductor FETs With Channel Length Scaling" was published by researchers at The University of Tokyo and Nara Institute of Science and Technology. Abstract "We have investigated the scaling potential of nanosheet oxide semiconductor FETs (NS OS FETs) for monolithic 3-D (M3D) integration in t... » read more

Review of Automatic EM Image Algorithms for Semiconductor Defect Inspection (KU Leuven, Imec)


A new technical paper titled "Electron Microscopy-based Automatic Defect Inspection for Semiconductor Manufacturing: A Systematic Review" was published by researchers at KU Leuven and imec. Abstract: "In this review, automatic defect inspection algorithms that analyze Electron Microscope (EM) images of Semiconductor Manufacturing (SM) products are identified, categorized, and discussed. Thi... » read more

Strain Engineering in 2D FETs (UCSB)


A new technical paper titled "Strain engineering in 2D FETs: Physics, status, and prospects" was published by researchers at UC Santa Barbara. "In this work, we explore the physics and evaluate the merits of strain engineering in two-dimensional van der Waals semiconductor-based FETs (field-effect-transistors) using DFT (density functional theory) to determine the modulation of the channel m... » read more

Method To Determine The Permittivity of Dielectric Materials in 3D Integrated Structures At Broadband RF Frequencies


A new technical paper titled "Characterizing the Broadband RF Permittivity of 3D-Integrated Layers in a Glass Wafer Stack from 100 MHz to 30 GHz" was published by researchers at NIST. Abstract "We present a method for accurately determining the permittivity of dielectric materials in 3D integrated structures at broadband RF frequencies. With applications of microwave and millimeter-wave ele... » read more

Relative Humidity in Conductive Atomic Force Microscopy (KAUST)


A new technical paper titled "The Effect of Relative Humidity in Conductive Atomic Force Microscopy" was published by researchers at KAUST. Abstract "Conductive atomic force microscopy (CAFM) analyzes electronic phenomena in materials and devices with nanoscale lateral resolution, and it is widely used by companies, research institutions, and universities. Most data published in the field o... » read more

Steps to Fabricate Nanotips Overhanging From Chip Edge By a Few Micrometers (CNRS, CEA-Leti)


A new technical paper titled "Suspended tip overhanging from chip edge for atomic force microscopy with an optomechanical resonator" was published by researchers at Lab. d'Analyse et d'Architecture des Systèmes du CNRS and CEA-LETI. Abstract Raising the mechanical frequency of atomic force microscopy (AFM) probes to increase the measurement bandwidth has been a long-standing expectation in... » read more

ECTC 2024 Session Readout: Advancement of Metrology


A Electronic Components and Technology Conference (ECTC) session report titled "2024 ECTC Special Session Report: Advancing Metrology for Next-Generation Microelectronics" was published by NIST, Binghamton University, and TechSearch International. Abstract: "Metrology plays a pivotal role in semiconductor research, manufacturing, packaging and assembly. It is critical to the success of this... » read more

Buried Si/SiGe Interfaces Investigated Using Soft X-Ray Reflectometry and STEM-EDX


A new technical paper titled "Interface sharpness in stacked thin film structures: a comparison of soft X-ray reflectometry and transmission electron microscopy" was published by researchers at Physikalisch-Technische Bundesanstalt (PTB), imec, and Thermo Fisher Scientific Inc. The paper states: "A key element of semiconductor fabrication is the precise deposition of thin films. Among other... » read more

Classification and Localization of Semiconductor Defect Classes in Aggressive Pitches (imec, Screen)


A new technical paper titled "An Evaluation of Continual Learning for Advanced Node Semiconductor Defect Inspection" was published by Imec and SCREEN SPE Germany. Abstract "Deep learning-based semiconductor defect inspection has gained traction in recent years, offering a powerful and versatile approach that provides high accuracy, adaptability, and efficiency in detecting and classifying... » read more

Functional Compaction for Functional Test Sequences (Purdue University, I. Pomeranz)


A new technical paper titled "Functional Compaction for Functional Test Sequences" was published by IEEE Fellow Irith Pomeranz at Purdue University. Abstract: "The occurrence of silent data corruption because of hardware defects in large scale data centers points to the advantages of applying functional test sequences to detect hardware defects that escape scan-based tests. When using funct... » read more

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