category: Transistors

category: IoT, Security & Automotive

Cross-Shaped Reconfigurable Transistor (CS-RFET) With Flexible Signal Routing
By Technical Paper Link - 17 May, 2023 - Comments: 0

A new technical paper titled "Cross-Shape Reconfigurable Field Effect Transistor for Flexible Signal Routing" was published by researchers at NaMLab gGmbH, École Centrale de Lyon, and TU Dresden. "A detailed comprehensive study of the cross-shape reconfigurable field effect transistor electrical characteristics are presented. The fabricated device demonstrates nearly equal transistor charac... » read more

28nm-HKMG-Based FeFET Devices For Synaptic Applications
By Technical Paper Link - 09 May, 2023 - Comments: 0

A technical paper titled "28 nm high-k-metal gate ferroelectric field effect transistors based synapses- A comprehensive overview" was published by researchers at Fraunhofer-Institut für Photonische Mikrosysteme IPMS, Indian Institute of Technology Madras, and GlobalFoundries. Abstract This invited article we present a comprehensive overview of 28 nm high-k-metal gate-based ferroelectric f... » read more

Reconfigurability and NTC-based Signal Modulation Within a Single Ferroelectric TFET
By Technical Paper Link - 09 May, 2023 - Comments: 0

A new technical paper titled "Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor" was published by researchers at Lund University in Sweden. Abstract: "Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications. Here, we ... » read more

Hexagonal Boron Nitride Memristors With Nickel Electrodes: Current Conduction Mechanisms & Resistive Switching Behavior (RWTH Aachen)
By Technical Paper Link - 06 May, 2023 - Comments: 0

A new technical paper titled "Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes" was published by researchers at RWTH Aachen University and Peter Gruenberg Institute. Abstract: "The 2D insulating material hexagonal boron nitride (h-BN) has attracted much attention as the active medium in memristive devices due to i... » read more

Gate Drive Circuit Without A Speed-Up Capacitor for a GaN Gate Injection Transistor
By Technical Paper Link - 05 May, 2023 - Comments: 0

A technical paper titled "Gate Drive Circuit Suitable for a GaN Gate Injection Transistor" was published by researchers at Nagoya University. Abstract "A GaN gate injection transistor (GIT) has great potential as a power semiconductor device. However, a GaN GIT has a diode characteristic at the gate-source, and a corresponding gate drive circuit is thus required. Several studies in the lite... » read more

GaN Power Devices: Stability, Reliability and Robustness Issues
By Technical Paper Link - 30 Apr, 2023 - Comments: 0

A technical paper titled "Stability, Reliability, and Robustness of GaN Power Devices: A Review" was published by researchers at Virginia Polytechnic Institute and State University, Johns Hopkins University Applied Physics Laboratory, and Kyushu University. "Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, t... » read more

Using The Schottky Barrier Transistor in Various Applications & Material Systems
By Technical Paper Link - 30 Apr, 2023 - Comments: 0

A new technical review paper titled "The Schottky barrier transistor in emerging electronic devices" was published by researchers at THM University of Applied Sciences, Chalmers University of Technology, CNRS, University Grenoble Alpes and others. Abstract "This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of... » read more

Vertical Nanowire Gate-All-Around FETs based on the GeSn-Material System Grown on Si
By Technical Paper Link - 10 Apr, 2023 - Comments: 0

A new technical paper titled "Vertical GeSn nanowire MOSFETs for CMOS beyond silicon" was published by researchers at Peter Grünberg Institute 9, JARA, RWTH Aachen University, CEA, LETI, University of Grenoble Alpes, University of Leeds, and IHP. "Here, we present high performance, vertical nanowire gate-all-around FETs based on the GeSn-material system grown on Si. While the p-FET transcon... » read more

Characteristics of Three-Gated Reconfigurable FETs
By Technical Paper Link - 03 Apr, 2023 - Comments: 0

A new technical paper titled "Insights into the Temperature Dependent Switching Behaviour of Three-Gated Reconfigurable Field Effect Transistors" was published by researchers at NaMLAB and TU Dresden. "In this work, it is possible to assess the performances of Three-Gated Reconfigurable Field Effect Transistors within a considerable temperature span and finally provide significant insights o... » read more

Combination of AI Techniques To Find The Best Ways to Place Transistors on Silicon Chips
By Technical Paper Link - 30 Mar, 2023 - Comments: 0

A new technical paper titled "AutoDMP: Automated DREAMPlace-based Macro Placement" was published by researchers at NVIDIA. Abstract: "Macro placement is a critical very large-scale integration (VLSI) physical design problem that significantly impacts the design power-performance-area (PPA) metrics. This paper proposes AutoDMP, a methodology that leverages DREAMPlace, a GPU-accelerated place... » read more

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