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Characterization Of CMP Processes With White Light Interferometry

Measurement and analysis advantages of white light interferometry for CMP components.

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Faster computer and electronic processors require smaller features for integrated circuits (IC), which in turn require smaller and smoother substrate surfaces. Chemical mechanical polishing (CMP) has become one of the most critical semiconductor fabrication technologies because it offers a superior means of removing unwanted topography in interlevel dielectric layers and achieving sufficient planarity for the creation of the IC or hybrid bonding for advanced packaging. The planarization performance of CMP process is significantly influenced by the polishing conditioner pad and the CMP conditioner. Therefore, much research has been done in the development and choice of the CMP pad/ conditioners and the overall CMP conditioning process. This application note describes the measurement and analysis advantages that white light interferometry (WLI) offers for the various CMP components. It also details an improvement study that investigated asperity behavior of the fluid layer under the wafer during the CMP process and revealed the effects of polishing and conditioning on the pads, as well as wafer polish results.

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