Why perpendicular STT-RAM is a promising candidate for eFlash in MCU and IoT applications.
Perpendicular Spin-Transfer Torque (STT) MRAM is a promising technology in terms of read/write speed, low power consumption and non-volatility, but there has not been a demonstration of high density manufacturability at small geometries. In this paper we present an unprecedented demonstration of a robust STT-MRAM technology designed in a 2x nm CMOS- embedded 40 Mb array. Key features are full array functionality with low BER (bit error rate), process uniformity and reliability, 10 years data retention at 125°C with extended endurance to ~ 107 cycles. All achieved with standard BEOL process temperatures. Data retention post 260°C solder reflow temperature cycle is demonstrated.
To read more, click here.
 |
 |
 |
 |
 |
 |
 |  |
Leave a Reply