Neuromorphic Computing Drives The Landscape Of Emerging Memories For Artificial Intelligence SoCs


The pace of deep machine learning and artificial intelligence (AI) is changing the world of computing at all levels of hardware architecture, software, chip manufacturing, and system packaging. Two major developments have opened the doors to implementing new techniques in machine learning. First, vast amounts of data, i.e., “Big Data,” are available for systems to process. Second, advanced ... » read more

Manufacturing Bits: April 21


Memristors reappear The University of Massachusetts Amherst has taken a step towards of the realization of neuromorphic computing--it has devised bio-voltage memristors based on protein nanowires. In neuromorphic computing, the idea is to bring the memory closer to the processing tasks to speed up a system. For this, the industry is attempting to replicate the brain in silicon. The goal is ... » read more

Inside The New Non-Volatile Memories


The search continues for new non-volatile memories (NVMs) to challenge the existing incumbents, but before any technology can be accepted, it must be proven reliable. “Everyone is searching for a universal memory,” says TongSwan Pang, Fujitsu senior marketing manager. "Different technologies have different reliability challenges, and not all of them may be able to operate in automotive g... » read more

Memory Issues For AI Edge Chips


Several companies are developing or ramping up AI chips for systems on the network edge, but vendors face a variety of challenges around process nodes and memory choices that can vary greatly from one application to the next. The network edge involves a class of products ranging from cars and drones to security cameras, smart speakers and even enterprise servers. All of these applications in... » read more

Week In Review: Manufacturing, Test


Market research The coronavirus is having a major impact on the semiconductor, smartphone and related markets. For example, global fab equipment spending promises to rebound from its 2019 downturn and see a modest recovery this year, according to a report from SEMI. But the coronavirus (COVID-19) outbreak has eroded fab equipment spending in China and elsewhere in 2020, according to the rep... » read more

Testing Embedded MRAM IP For SoCs


The challenges of embedded memory test and repair are well known, including maximizing fault coverage to prevent test escapes and using spare elements to maximize manufacturing yield. With the surge in availability of promising non-volatile memory architectures to augment and potentially replace traditional volatile memories, a new set of SoC level memory test and repair challenges are emerging... » read more

MRAM Process Development And Production Briefing


By Dr. Meng Zhu, Dr. Roman Sappey, and Jeff Barnum MRAM (Magnetoresistive Random-Access Memory) is a type of non-volatile memory (NVM) that utilizes magnetic states to store information. The basic structure of MRAM is a magnetic-tunnel junction (MTJ), which consists of two ferromagnetic (FM) layers separated by an insulating tunnel barrier (Fig.1). When the magnetizations of the two magnetic... » read more

Manufacturing Bits: Dec. 16


Imec-Leti alliance At the recent IEEE International Electron Devices Meeting (IEDM), Imec and Leti announced plans to collaborate in select areas. The two R&D organizations plan to collaborate in two areas—artificial intelligence (AI) and quantum computing. Imec and Leti have been separately working on AI technologies based on various next-generation memory architectures. Both entitie... » read more

DRAM Scaling Challenges Grow


DRAM makers are pushing into the next phase of scaling, but they are facing several challenges as the memory technology approaches its physical limit. DRAM is used for main memory in systems, and today’s most advanced devices are based on roughly 18nm to 15nm processes. The physical limit for DRAM is somewhere around 10nm. There are efforts in R&D to extend the technology, and ultimate... » read more

Building An MRAM Array


MRAM is gaining traction in a variety of designs as a middle-level type of memory, but there are reasons why it took so long to bring this memory to market. A typical magnetoresistive RAM architecture is based on CoFeB magnetic layers, with an MgO tunneling barrier. The reference layer should have zero net magnetization to make sure that it doesn’t influence the orientation of the free lay... » read more

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