A technical paper titled “Ultra-steep slope cryogenic FETs based on bilayer graphene” was published by researchers at RWTH Aachen University, Forschungszentrum Julich, National Institute for Materials Science (Japan), and AMO GmbH.
“Here, we show that FETs based on Bernal stacked bilayer graphene encapsulated in hexagonal boron nitride and graphite gates exhibit inverse subthreshold slopes of down to 250 μV/dec at 0.1 K, approaching the Boltzmann limit. This result indicates an effective suppression of band tailing in van-der-Waals heterostructures without bulk interfaces, leading to superior device performance at cryogenic temperature, ” states the paper.
Find the technical paper here. Published August 2024 (preprint).
Icking, E., D. Emmerich, K. Watanabe, T. Taniguchi, B. Beschoten, M. C. Lemme, J. Knoch, and C. Stampfer. “Ultra-steep slope cryogenic FETs based on bilayer graphene.” arXiv preprint arXiv:2408.01111 (2024). arXiv:2408.01111v1.
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