Chip Industry’s Technical Paper Roundup: Oct 25


New technical papers added to Semiconductor Engineering’s library this week. [table id=59 /] » read more

Wafer Scale Tool To Transfer Graphene


A new technical paper titled "Assessment of wafer-level transfer techniques of graphene with respect to semiconductor industry requirements" was published by researchers at RWTH Aachen University, AMO GmbH, Infineon Technologies, Protemics GmbH, and Advantest Europe. Abstract (partial): "Graphene is a promising candidate for future electronic applications. Manufacturing graphene-based elect... » read more

Technical Paper Roundup: Sept 6


New technical papers added to Semiconductor Engineering’s library this week. [table id=49 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit f... » read more

Particle Removal From EUV Photomasks


This technical paper titled "AFM-Based Hamaker Constant Determination with Blind Tip Reconstruction" was just published by researchers at ASML, RWTH Aachen University, and AMO GmbH. The research reports a vaccuum AFM-based approach for particle removal from EUV photomasks. Find the technical paper here. Published August 2022. Ku, B., van de Wetering, F., Bolten, J., Stel, B., van de K... » read more

Technical Paper Round-Up: June 8


  New technical papers added to Semiconductor Engineering’s library this week. [table id=32 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a ... » read more

Fermi-level Tuning Improves Device Stability of 2D Transistors With Amorphous Gate Oxides


New technical paper titled "Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning" from researchers at Institute for Microelectronics, TU Wien, AMO GmbH, University of Wuppertal, and RWTH Aachen University. Abstract "Electronic devices based on two-dimensional semiconductors suffer from limited electrical stability because charge carriers origin... » read more

Zero-Bias Power-Detector Circuits based on MoS2 Field-Effect Transistors on Wafer-Scale Flexible Substrates


Abstract: "We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS2 field effect transistors (FETs). The MoS2 FETs are fabricated using a wafer-scale process on 8 μm thick polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS2 sheets, grown with different processes and showi... » read more