A new technical paper titled “Experimental Assessment of Multilevel RRAM-Based Vector-Matrix Multiplication Operations for In-Memory Computing” was published by researchers at IHP (the Leibniz Institute for High Performance Microelectronics).
Abstract:
“Resistive random access memory (RRAM)-based hardware accelerators are playing an important role in the implementation of in-memory computing (IMC) systems for artificial intelligence applications. The latter heavily rely on vector-matrix multiplication (VMM) operations that can be efficiently boosted by RRAM devices. However, the stochastic nature of the RRAM technology is still challenging real hardware implementations. To study the accuracy degradation of consecutive VMM operations, in this work we programed two RRAM subarrays composed of 8 × 8 one-transistor-one-resistor (1T1R) cells following two different distributions of conductive levels. We analyze their robustness against 1000 identical consecutive VMM operations and monitor the inherent devices’ nonidealities along the test. We finally quantize the accuracy loss of the operations in the digital domain and consider the trade-offs between linearly distributing the resistive states of the RRAM cells and their robustness against nonidealities for future implementation of IMC hardware systems.”
Find the technical paper here. Published February 2023.
E. P. -B. Quesada et al., “Experimental Assessment of Multilevel RRAM-Based Vector-Matrix Multiplication Operations for In-Memory Computing,” in IEEE Transactions on Electron Devices, doi: 10.1109/TED.2023.3244509. Open access.
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