Research Bits: May 16

Germanium-tin transistor Scientists at Forschungszentrum Jülich, CEA-Leti, University of Leeds, Leibniz Institute for High Performance Microelectronics, and RWTH Aachen University fabricated a new type of transistor from a germanium-tin alloy. Charge carriers can move faster in the material than in silicon or germanium, which enables lower voltages in operation. “The germanium–tin syst... » read more

Chip Industry’s Technical Paper Roundup: Feb. 28

New technical papers recently added to Semiconductor Engineering’s library: [table id=83 /] If you have research papers you are trying to promote, we will review them to see if they are a good fit for our global audience. At a minimum, papers need to be well researched and documented, relevant to the semiconductor ecosystem, and free of marketing bias. There is no cost involved for us ... » read more

In-Memory Computing: Assessing Multilevel RRAM-Based VMM Operations

A new technical paper titled "Experimental Assessment of Multilevel RRAM-Based Vector-Matrix Multiplication Operations for In-Memory Computing" was published by researchers at IHP (the Leibniz Institute for High Performance Microelectronics). Abstract: "Resistive random access memory (RRAM)-based hardware accelerators are playing an important role in the implementation of in-memory computin... » read more

Power/Performance Bits: Nov. 2

GaN CMOS ICs Researchers from the Hong Kong University of Science and Technology (HKUST) are working to increase the functionality available to wide bandgap gallium nitride (GaN) electronics. GaN is frequently used in power electronics, such as power converters and supplies. However, GaN CMOS technology has been hampered by the difficulties in implementing p-channel transistors and integrat... » read more