A new approach to developing an alternative and cost-effective underlayer to functionalize surfaces and enable EUV patterning.
In EUV lithography, good resist patterning requires an assist layer beneath it to provide adhesion to prevent pattern collapse of small features and allow for higher aspect ratios. In addition, future EUV high numerical aperture (NA) is expected to require a decrease in thickness from the overall patterning stack. In this study, we are exploring a fundamentally new approach to developing an alternative and cost-effective underlayer to functionalize surfaces and enable EUV patterning. Rather than forming a 5-nm polymer film between the resist and its substrate, we propose to modify the substrate by spin-coating a thinner layer.
Authors: Si Li, Joyce Lowes, Ruimeng Zhang, Ming Luo, Kelsey Brakensiek, Veerle Van Driessche, Douglas J. Guerrero
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