tag: Applied Materials

Optical Lithography, Take Two
By Mark LaPedus - 21 Feb, 2013 - Comments: 0

By Mark LaPedus It’s the worst-kept secret in the industry. Extreme ultraviolet (EUV) lithography has missed the initial stages of the 10nm logic and 1xnm NAND flash nodes. Chipmakers hope to insert EUV by the latter stages of 10nm or by 7nm, but vendors are not counting on EUV in the near term and are preparing their back-up plans. Barring a breakthrough with EUV or other technology, IC ... » read more

What Will Replace Dual Damascene?
By Mark LaPedus - 24 Jan, 2013 - Comments: 0

By Mark LaPedus In the mid-1990s, IBM announced the world’s first devices using a copper dual damascene process. At the time, the dual damascene manufacturing process was hailed as a major breakthrough. The new copper process enabled IC makers to scale the tiny interconnects in a device, as the previous material, aluminum, faced some major limitations. Dual damascene remains the workhorse... » read more

Stacked Die From A Networking Angle
By Mark LaPedus - 24 Jan, 2013 - Comments: 1

By Mark LaPedus The first wave of 2.5D chips using silicon interposers are trickling out in the marketplace.FPGA vendor Xilinx was the first chipmaker to ship a 2.5D device, and Altera, Cisco, Huawei and IBM recently have talked about their respective 2.5D chip developments. Generally, Altera and Xilinx have taken a somewhat identical and straightforward approach. The two companies are sepa... » read more

Straight Talk On 3D TSVs
By Ed Sperling - 13 Dec, 2012 - Comments: 0

By Mark LaPedus Semiconductor Manufacturing & Design sat down to discuss 3D device challenges and applications with John Lau, a fellow at the Industrial Technology Research Institute (ITRI), a research organization in Taiwan. SMD: What is ITRI doing in 3D TSVs? Lau: At ITRI we have developed the world’s first Applied Materials’ 300mm (3D TSV) integration line. The line was comple... » read more

Interconnect Troubles
By Applied Materials Writers - 13 Dec, 2012 - Comments: 0

By Mehul Naik These days, transistor scaling is driving some of the most exciting innovations in device architecture and getting lots of attention as a result. What may be less obvious is the cascading effect transistor scaling is having on the interconnect. The biggest challenges result directly from pitch reduction required to support the increasing functionality. These include poor pattern ... » read more

Interconnect Performance In The Spotlight
By Applied Materials Writers - 04 Dec, 2012 - Comments: 0

By Richard Lewington Are you going to be in the San Francisco area on December 11th? We're hosting a forum to explore the path that interconnect technology must take to keep pace with transistor scaling and the transition to new 3D architectures. Transistors get all the attention these days as the savior of Moore's Law. But there's no point making transistors faster if the wires between ... » read more

Mobile Memory Madness
By Ed Sperling - 15 Nov, 2012 - Comments: 0

By Mark LaPedus The insatiable thirst for more bandwidth in smartphones, tablets and other devices has prompted an industry standards body to revamp its mobile memory interface roadmap. As part of the changes, the Joint Electron Devices Engineering Council (JEDEC) has scaled back the initial version of Wide I/O technology and pushed out the introduction date of a true 3D stacked architectur... » read more

The Return Of RC Delay
By Ed Sperling - 14 Nov, 2012 - Comments: 0

Semiconductor Manufacturing & Design talks with Mehul Naik of Applied Materials about why RC delay has become a hot topic again, and what will be necessary to solve it. [youtube vid=aQjqcpZWi0A] » read more

Quantum Shifts
By Ed Sperling - 25 Oct, 2012 - Comments: 0

By Ed Sperling Intel, STMicroelectronics and some of the leading memory providers already are working on 10nm process technology, and advanced researchers in universities and industry-leading companies are looking at 7nm, 5nm and even beyond. Those who have glimpsed this technological future have similar observations. There is no single technology problem that has to be solved at these node... » read more

Challenges Grow For EUV
By Ed Sperling - 18 Oct, 2012 - Comments: 0

By Mark LaPedus In the late 1990s, a group led by Intel launched a consortium to propel extreme ultraviolet (EUV) lithography into the mainstream. Originally, the consortium, dubbed the EUV LLC, envisioned the advent of EUV scanners that would move into production at the 65nm node. Clearly, the now-defunct consortium underestimated the difficulties and challenges associated with EUV. ASM... » read more

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