Researchers report on quantum dots that are hosted at a 28Si/28SiO2 interface and fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing, achieving nanoscale gate patterns with excellent yield.
Abstract:
“Full-scale quantum computers require the integration of millions of qubits, and the potential of using industrial semiconductor manufacturing to meet this need has driven the development of quantum computing in silicon quantum dots. However, fabrication has so far relied on electron-beam lithography and, with a few exceptions, conventional lift-off processes that suffer from low yield and poor uniformity. Here we report quantum dots that are hosted at a 28Si/28SiO2 interface and fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. With this approach, we achieve nanoscale gate patterns with excellent yield. In the multi-electron regime, the quantum dots allow good tunnel barrier control—a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance in the few-electron regime reveals relaxation times of over 1 s at 1 T and coherence times of over 3 ms.”
Find the open access technical paper here. Published Mar. 2022.
Zwerver, A.M.J., Krähenmann, T., Watson, T.F. et al. Qubits made by advanced semiconductor manufacturing. Nat Electron 5, 184–190 (2022). https://doi.org/10.1038/s41928-022-00727-9.
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