A technical paper titled “N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs” was published by researchers at University of Michigan.
The researchers created “red-microLEDs that are nearly three orders of magnitude smaller in surface area than previously reported devices while exhibiting external quantum efficiency of ~1.2%,” according to the University of Michigan’s article. The research “provides a path to overcome the efficiency cliff of deep visible micro-LEDs, which are relevant for a broad range of applications including mobile displays and virtual/augmented reality devices and systems,” according to the paper.
Find the technical paper here. Published 2022.
A. Pandey, Y. Malhotra, P. Wang, K. Sun, X. Liu, and Z. Mi, “N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs,” Photon. Res. 10, 1107-1116 (2022).
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