Leti Looks at Using Strain with FD-SOI for High-Perf Apps


The researchers at Leti working on FD-SOI have extremely deep expertise in it. One of the areas they've looked at is performance boosters. With the interest in FD-SOI rapidly increasing on the heels of the recent ST-GF announcement, their work becomes even more timely. A key Leti team wrote a summary of some recent strain work, which first appeared as part of the Advanced Substra... » read more

Fabless-Foundry Model Under Stress


By Mark LaPedus The semiconductor roadmap was once a smooth and straightforward path, but chipmakers face a bumpy and challenging ride as they migrate to the 20nm node and beyond. Among the challenges seen on the horizon are the advent of 3D stacking, 450mm fabs, new transistor architectures, multi-patterning, and the questionable availability of extreme ultraviolet (EUV) lithography. ... » read more

Bucket Lists


At 130nm, the introduction of copper interconnects, 300mm wafers and low-k dielectrics left the entire supply chain breathless. There had never been as many changes at a single process node in the history of semiconductors. At 28nm, the number of changes will pale compared to what’s necessary at 20nm, and that will pale to what’s required at 14nm. But unlike 130nm, when most of those cha... » read more

What’s ST’s FD-SOI Technology All About?


As I blogged here on SemiMD last week, STMicroelectronics has announced that to supplement in-house production at their fab in Crolles, the company has tapped GlobalFoundries for high-volume production of 28nm then 20nm FD-SOI mobile devices.  ST will also open access to its FD-SOI technology to GlobalFoundries’ other customers.  High-volume manufacturing will kick off with ST-Ericsson’s ... » read more

GloFo to Fab 28/20nm FD-SOI for ST; ST Tech Open to GF Customers


Two big pieces of news have recently been announced by STMicroelectronics: to supplement in-house production at Crolles, the company has tapped GlobalFoundries for high-volume production of 28nm then 20nm FD-SOI mobile devices; ST will open access to its FD-SOI technology to GlobalFoundries’ other customers. The high-volume manufacturing will kick off with ST-Ericsson’s ARM-based 2... » read more

The 28nm Foundry Crunch


By Mark LaPedus Faced with huge and unforeseen demand at the 28nm node, leading-edge foundries are scrambling to play catch-up and are boosting their fab capacities at a staggering pace. But analysts warn that 28nm foundry capacity will be tight throughout 2012, and perhaps into 2013, putting some chipmakers in a pinch. Many blame the 28nm foundry capacity shortfall on a combination of t... » read more

Soitec’s Wafer Roadmap for Fully Depleted Planar and 3D/FinFET


The following is a special guest post by Steve Longoria, Senior VP of Worldwide Business Development at Soitec.  It first appeared as part of the Advanced Substrate News special edition on FD-SOI industrialization. ~~ Today’s semiconductor industry is moving through several challenging transitions that are creating a significant opportunity for Soitec to bring incremental value to th... » read more

Rethinking Timing Optimization


By Ann Steffora Mutschler As semiconductor manufacturing technology continues its march toward 20nm, SoCs are plagued with advanced interconnect delays, cross capacitance, and process variability, as well as area and power constraints—and the significance of these factors is increasing with each passing node. “With lower nodes we are getting advantage on area, more and more logic is get... » read more

ST-Ericsson 28nm FD-SOI smartphone SOC, Q3 tape-out (interview)


ASN recently had a chance to talk to ST-Ericsson’s Chief Chip Architect Louis Tannyeres  about the move to 28nm FD-SOI for smartphones and tablet SOCs.  Take-away message:  FD-SOI solves – with less process complexity – scaling, leakage and variability issues to further shrink CMOS technology beyond 28nm. Here's what he said. ~~ [caption id="attachment_441" align="alignleft" wi... » read more

Consortium Results (Part 3 of 3): 20nm FDSOI Comes Out Way Ahead


The results of the most recent SOI Consortium benchmarking study detail the interest of planar FD-SOI as early as the 28nm and 20nm technology nodes, in terms of performance, power and manufacturability. This 3-part blog series looks further at some of the implications. ~~ The SOI Industry Consortium announcement at the end of the year provided silicon proof that FD-SOI handily bea... » read more

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