2D Ferroelectric Field-Effect Transistors (Penn State, U. of Minnesota)


A new technical paper titled "Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO3 nanomembranes at sub-ambient temperatures" was published by researchers at Penn State University and University of Minnesota. Abstract "Incipient ferroelectricity bridges traditional dielectrics and true ferroelectrics, enabling advanced electronic and memory devices. Firstly... » read more

A Modelling Approach To Well-Known And Exotic 2D Materials For Next-Gen FETs


A technical paper titled “Field-Effect Transistors based on 2-D Materials: a Modeling Perspective” was published by researchers at ETH Zurich. Abstract: "Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity... » read more

Fermi-level Tuning Improves Device Stability of 2D Transistors With Amorphous Gate Oxides


New technical paper titled "Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning" from researchers at Institute for Microelectronics, TU Wien, AMO GmbH, University of Wuppertal, and RWTH Aachen University. Abstract "Electronic devices based on two-dimensional semiconductors suffer from limited electrical stability because charge carriers origin... » read more