Scaling Nanoribbon Transistors with Monolayer TMDs (Stanford, Chalmers, Horiba, SLAC)


Researchers from Stanford University, Chalmers University of Technology, HORIBA Scientific, and SLAC National Accelerator Laboratory have published “Scaling nanoribbon transistors with monolayer transition metal dichalcogenides”. Abstract “Nanoscale transistors demand aggressive scaling of all channel dimensions—length, width and thickness. Two-dimensional semiconductors (2DS... » read more

Doping-Dependent Charge Trapping in WS2 FETs (KU Leuven, imec, TU Wien)


A new technical paper titled "Impact of doping and channel inhomogeneities on the stability of industrially fabricated WS2 FETs" was published by researchers at KU Leuven, imec and TU Wien. Abstract "We report doping-dependent charge trapping in WS2 field-effect transistors fabricated on a 300 mm wafer. In particular, higher n-type doping–associated with smaller channel areas–correlat... » read more

Integrating vdW-Interface-Based high-κ Dielectrics On Both n- And p-Type 2D Semiconductors (Sungkyunkwan U., KAIST)


A new technical paper "High-κ dielectric van der Waals integration on 2D semiconductors for three-dimensional complementary logic systems" was published by researchers at Sungkyunkwan University and KAIST. "This scalable methodology enables the vertical integration of complementary logic, demonstrated by complementary FET inverters and ring oscillators, establishing a promising route toward... » read more

Overcoming The vdW Gap Bottleneck in Semiconductor Scaling (TU Wien)


A new technical paper titled "The van der Waals Gap: a Hidden Showstopper in Semiconductor Device Scaling" was published by researchers at TU Wien. Abstract "Continued miniaturization of transistors is critical for sustaining advances in computing performance, energy efficiency, and integration density. A central nanoscale challenge is controlling gate leakage through ultrathin dielectrics.... » read more

Research Bits: Oct. 21


Direct patterning with UV cross-linking Researchers from Ulsan National Institute of Science and Technology (UNIST), Yonsei University, Sungkyunkwan University, University of Chemistry and Technology Prague, and Sogang University developed a technique that enables the direct patterning of 2D semiconductor materials onto substrates without the use of toxic solvents. The process involves disp... » read more

Dielectrics for 2D TMDs, Including Deposition Strategies And Emerging Dielectric Materials (Cambridge)


A new technical paper titled "Gate dielectrics for transistors based on two-dimensional transition metal dichalcogenide semiconductors" was published by researchers at University of Cambridge. "This perspective analyses the state of the art on 2D TMD and dielectric interfaces, highlighting key challenges in depositing oxide dielectrics on top of atomically thin TMD semiconductors. We provide... » read more

High-Performance p-type 2D FETs By Nitric Oxide Doping (Penn State)


A new technical paper titled "High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping" was published by researchers at Penn State University and Florida International University. Abstract "Two-dimensional (2D) materials are promising candidates for next-generation electronics, but the realization of high-performance p-type 2D field-effect transistors (FETs) has... » read more

Research Bits: Mar. 25


2D materials in 3D transistors Researchers at the University of California Santa Barbara investigated 3D gate-all-around (GAA) transistors made using 2D semiconductors. They considered three different approaches to channel stacking: nano-sheet FETs, nano-fork FETs, and nano-plate FETs. The nano-plate FET architecture, which exploits lateral stacking of 2D layers, was found to maximize the g... » read more

Ultranarrow Semiconductor WS2 Nanoribbon FETs (Chalmers)


A new technical paper titled "Ultranarrow Semiconductor WS2 Nanoribbon Field-Effect Transistors" was published by researchers at Chalmers University of Technology. Abstract "Semiconducting transition metal dichalcogenides (TMDs) have attracted significant attention for their potential to develop high-performance, energy-efficient, and nanoscale electronic devices. Despite notable advancem... » read more

2D Semiconductors Make Progress, But So Does Silicon


Semiconductor industry researchers have been anticipating the need for better transistor channel materials to replace silicon for a long time, but silicon devices have continued to improve enough to postpone that change. Silicon continues to provide an unmatched combination of device performance, manufacturability, and cost effectiveness. In recent years, though, the “end of silicon” cha... » read more

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