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Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping (NIST)


A new research paper titled "Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping" was published by researchers at NIST, Theiss Research, Naval Research Laboratory, and Nova Research. Abstract: "The development of processes to controllably dope two-dimensional semiconductors is critical to achieving next generation electronic and optoelectronic devices. Unde... » read more

Fermi-level Tuning Improves Device Stability of 2D Transistors With Amorphous Gate Oxides


New technical paper titled "Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning" from researchers at Institute for Microelectronics, TU Wien, AMO GmbH, University of Wuppertal, and RWTH Aachen University. Abstract "Electronic devices based on two-dimensional semiconductors suffer from limited electrical stability because charge carriers origin... » read more

Pinpointing the Dominant Component of Contact Resistance to Atomically Thin Semiconductors


Abstract "Achieving good electrical contacts is one of the major challenges in realizing devices based on atomically thin two-dimensional (2D) semiconductors. Several studies have examined this hurdle, but a universal understanding of the contact resistance and an underlying approach to its reduction are currently lacking. In this work we expose the shortcomings of the classical contact resist... » read more

Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers


Abstract "Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D semiconductor devices. Here, we show that MoSi2N4 and WSi2N4 monolayers—an emerging 2D semiconductor family with exceptional physical properties—exhibit stron... » read more

Power/Performance Bits: Dec. 6


Tunable 2D semiconductors Researchers from the Singapore University of Technology and Design (SUTD), Hengyang Normal University, Nanjing University, National University of Singapore, and Zhejiang University identified a family of 2D semiconductors that could have lower resistance and enable further scaling. “Due to the quantum tunnelling effect, shrinking a silicon-based transistor too sm... » read more

Nudging 2D semiconductors forward


The buzz about 2D materials replacing silicon appears to be premature. While 2D semiconductors have emerged as potential successors, it's not clear when or even if that will happen. As Iuliana Radu, Imec's director of quantum and exploratory computing observed, the “end” of silicon has been predicted many times before. It is not clear when 2D semiconductors will need to be ready. In fac... » read more

Graphene and two-dimensional materials for silicon technology


Abstract: "The development of silicon semiconductor technology has produced breakthroughs in electronics—from the microprocessor in the late 1960s to early 1970s, to automation, computers and smartphones—by downscaling the physical size of devices and wires to the nanometre regime. Now, graphene and related two-dimensional (2D) materials offer prospects of unprecedented advances in device ... » read more

The Growing Materials Challenge


By Katherine Derbyshire & Ed Sperling Materials have emerged as a growing challenge across the semiconductor supply chain, as chips continue to scale, or as they are utilized in new devices such as sensors for AI or machine learning systems. Engineered materials are no longer optional at advanced nodes. They are now a requirement, and the amount of new material content in chips contin... » read more