tag: 3nm

New Memories Add New Faults
By Bryon Moyer - 07 Sep, 2021 - Comments: 1

New non-volatile memories (NVM) bring new opportunities for changing how we use memory in systems-on-chip (SoCs), but they also add new challenges for making sure they will work as expected. These new memory types – primarily MRAM and ReRAM – rely on unique physical phenomena for storing data. That means that new test sequences and fault models may be needed before they can be released t... » read more

Inside Intel’s Ambitious Roadmap
By Mark LaPedus and Ed Sperling - 23 Aug, 2021 - Comments: 2

Ann Kelleher, senior vice president and general manager of Technology Development at Intel, sat down with Semiconductor Engineering to talk about the company’s new logic roadmap, as well as lithography, packaging, and process technology. What follows are excerpts of that discussion. SE: Intel recently disclosed its new logic roadmap. Beyond Intel 3, the company is working on Intel 20A. Wit... » read more

Advancing To The 3nm Node And Beyond: Technology, Challenges And Solutions
By Michael Hargrove - 19 Aug, 2021 - Comments: 0

It seems like yesterday that finFETs were the answer to device scaling limitations imposed by shrinking gate lengths and required electrostatics. The introduction of finFETs began at the 22nm node and has continued through the 7nm node. Beyond 7nm, it looks like nanosheet device structures will be used for at least the 5nm and probably the 3nm nodes. The nanosheet device structure is the brainc... » read more

Current And Future Packaging Trends
By Mark LaPedus - 19 Aug, 2021 - Comments: 1

Semiconductor Engineering sat down to discuss IC packaging technology trends and other topics with William Chen, a fellow at ASE; Michael Kelly, vice president of advanced packaging development and integration at Amkor; Richard Otte, president and CEO of Promex, the parent company of QP Technologies; Michael Liu, senior director of global technical marketing at JCET; and Thomas Uhrmann, directo... » read more

Impact Of GAA Transistors At 3/2nm
By Brian Bailey - 16 Aug, 2021 - Comments: 2

The chip industry is poised for another change in transistor structure as gate-all-around (GAA) FETs replace finFETs at 3nm and below, creating a new set of challenges for design teams that will need to be fully understood and addressed. GAA FETs are considered an evolutionary step from finFETs, but the impact on design flows and tools is still expected to be significant. GAA FETs will offer... » read more

The Increasingly Uneven Race To 3nm/2nm
By Mark LaPedus and Ed Sperling - 24 May, 2021 - Comments: 2

Several chipmakers and fabless design houses are racing against each other to develop processes and chips at the next logic nodes in 3nm and 2nm, but putting these technologies into mass production is proving both expensive and difficult. It's also beginning to raise questions about just how quickly those new nodes will be needed and why. Migrating to the next nodes does boost performance an... » read more

What’s Next In Fab Tool Technologies?
By Mark LaPedus - 12 May, 2021 - Comments: 0

Experts at the Table: Semiconductor Engineering sat down to discuss extreme ultraviolet (EUV) lithography and other next-generation fab technologies with Jerry Chen, head of global business development for manufacturing & industrials at Nvidia; David Fried, vice president of computational products at Lam Research; Mark Shirey, vice president of marketing and applications at KLA; and Aki Fuj... » read more

Foundry Wars Begin
By Mark LaPedus - 19 Apr, 2021 - Comments: 3

Leading-edge foundry vendors are gearing up for a new, high-stakes spending and technology race, setting the stage for a possible shakeup across the semiconductor manufacturing landscape. In March, Intel re-entered the foundry business, positioning itself against Samsung and TSMC at the leading edge, and against a multitude of foundries working at older nodes. Intel announced plans to build ... » read more

Changing The Rules For Chip Scaling
By Ed Sperling - 10 Mar, 2021 - Comments: 0

Aki Fujimura, CEO of D2S, talks with Semiconductor Engineering about the incessant drive for chip density, how to improve that density through other means than just scaling, and why this is so important for the chip industry. » read more

New Transistor Structures At 3nm/2nm
By Mark LaPedus - 25 Jan, 2021 - Comments: 12

Several foundries continue to develop new processes based on next-generation gate-all-around transistors, including more advanced high-mobility versions, but bringing these technologies into production is going to be difficult and expensive. Intel, Samsung, TSMC and others are laying the groundwork for the transition from today’s finFET transistors to new gate-all-around field-effect trans... » read more

← Older posts Newer posts →

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2024 SMG   |  Terms of Service  |  Privacy Policy