Reducing Transistor Capacitance At The 5nm Node Using A Source/Drain Contact Recess


In logic devices such as FinFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One potential way to reduce this parasitic capacitance is to add a source/drain contact (CT) recess step when building the source/drain metal structure. However, this additional structure can potentially increase the source/drain to via resistance. Using... » read more

What Will That Chip Cost?


In the past, analysts, consultants, and many other experts attempted to estimate the cost of a new chip implemented in the latest process technology. They concluded that by the 3nm node, only a few companies would be able to afford them — and by the time they got into the angstrom range, probably nobody would. Much has changed over the past few process nodes. Increasing numbers of startups... » read more

Characterization, Modeling, And Model Parameter Extraction Of 5nm FinFETs


A technical paper titled “A Comprehensive RF Characterization and Modeling Methodology for the 5nm Technology Node FinFETs” was published by researchers at IIT Kanpur, MaxLinear Inc., and University of California Berkeley. Abstract: "This paper aims to provide insights into the thermal, analog, and RF attributes, as well as a novel modeling methodology, for the FinFET at the industry stan... » read more

SRAM-Based IMC For Cryogenic CMOS Using Commercial 5 nm FinFETs


A technical paper titled “Cryogenic In-Memory Computing for Quantum Processors Using Commercial 5-nm FinFETs” was published by researchers at University of Stuttgart, Indian Institute of Technology Kanpur, University of California Berkeley, and Technical University of Munich. Abstract: "Cryogenic CMOS circuits that efficiently connect the classical domain with the quantum world are the co... » read more

Designing For In-Circuit Monitors


In every application space the semiconductor ecosystem touches, in-circuit monitors and sensors are playing an increasing role in silicon lifecycle management and concepts around reliability and resiliency — both during design as well as in the field. The combination of true system-level design, in/on-chip monitors, and improved data analysis are expected to drastically improve reliability... » read more

Challenges Grow For CD-SEMs At 5nm And Beyond


CD-SEM, the workhorse metrology tool used by fabs for process control, is facing big challenges at 5nm and below. Traditionally, CD-SEM imaging has relied on a limited number of image frames for averaging, which is necessary both to maintain throughput speeds and to minimize sample damage from the electron beam itself. As dimensions get smaller, these limitations result in higher levels of n... » read more

Physically Aware NoCs


More functions, greater security risks, and increasingly complicated integration of IP and various components below 7nm is increasing the time and effort it takes to get a functioning chip out the door. In many of these devices, the network on chip is the glue between various components, but it can take up to 10% to 12% of the total area of the SoC. Andy Nightingale, vice president of product m... » read more

Week In Review: Auto, Security, Pervasive Computing


Automotive Ambarella will use Samsung's 5nm process technology for its new CV3-AD685 automotive AI central domain controller, bringing "new levels of AI acceleration, system integration and power efficiency to ADAS and L2+ through L4 autonomous vehicles.” Renesas introduced four technologies for automotive communication gateway SoCs: (1) an architecture that dynamically changes... » read more

Nanoscale (5nm) Ferroelectric Semiconductor (University of Michigan)


A new technical paper titled "Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy" was published by researchers at University of Michigan, with DARPA funding. "Ferroelectric semiconductors stand out from others because they can sustain an electrical polarization, like the electric version of magnetism. But unlike a fridge magn... » read more

Screening For Silent Data Errors


Engineers are beginning to understand the causes of silent data errors (SDEs) and the data center failures they cause, both of which can be reduced by increasing test coverage and boosting inspection on critical layers. Silent data errors are so named because if engineers don’t look for them, then they don’t know they exist. Unlike other kinds of faulty behaviors, these errors also can c... » read more

← Older posts