Node Warfare?


By Mark LaPedus & Ed Sperling GlobalFoundries uncorked a 12nm finFET process, which the company said will provide a 15% increase in density and more than 10% improvement in performance over the foundry's existing 14nm process. This is GlobalFoundries' second 12nm process. It announced a 12nm FD-SOI process called 12FDX last September, although it first mentioned a 12nm process back in J... » read more

2.5D, ASICs Extend to 7nm


The leading-edge foundry market is heating up. For example, GlobalFoundries, Intel, Samsung and TSMC have recently announced their new and respective processes. The new processes from vendors range anywhere from 10nm to 4nm, although the current battle is taking place at 10nm and/or 7nm. In fact, one vendor, GlobalFoundries, this week will describe more details about its previously-announced... » read more

Samsung Unveils Scaling, Packaging Roadmaps


Samsung Foundry unveiled an aggressive roadmap that scales down to 4nm, and which includes a fan-out wafer-level packaging technology that bridges chips in the redistribution layer, 18nm FD-SOI, and a new organizational structure that allows the unit much greater autonomy as a commercial enterprise. The moves put [getentity id="22865" e_name="Samsung Foundry"] in direct competition with [get... » read more

Gaps In Metrology Could Impact Yield


For some time, chipmakers have been developing new and complex chip architectures, such as 3D NAND, finFETs and stacked die. But manufacturing these types of chips is no simple task. It requires a robust fab flow to enable new IC designs with good yields. In fact, yield is becoming a more critical part of the flow. Yield is a broad term that means different things to different parts of the ... » read more