tag: III-V materials

Pathfinding Beyond FinFETs
By Paula Doe - 13 Jun, 2016 - Comments: 0

Though the industry will likely continue to find ways to extend CMOS finFET technology further than we thought possible, at some point in the not-so-distant future, making faster, lower power ICs will require more disruptive changes. For something that could be only five to seven years out, there’s a daunting range of contending technologies. Improvements through the process will help, from E... » read more

7nm Fab Challenges
By Mark LaPedus - 21 Apr, 2016 - Comments: 3

Leading-edge foundry vendors have made the challenging transition from traditional planar processes into the finFET transistor era. The first [getkc id="185" kc_name="finFETs"] were based on the 22nm node, and now the industry is ramping up 16nm/14nm technologies. Going forward, the question is how far the finFET can be scaled. In fact, 10nm finFETs from Samsung are expected to ramp by ye... » read more

Inside Process Technology
By Mark LaPedus - 21 Apr, 2016 - Comments: 1

Semiconductor Engineering sat down to discuss the foundry business, memory, process technology, lithography and other topics with David Fried, chief technology officer at [getentity id="22210" e_name="Coventor"], a supplier of predictive modeling tools. What follows are excerpts of that conversation. SE: Chipmakers are ramping up 16nm/14nm finFETs today, with 10nm and 7nm finFETs just around... » read more

Overview Of Atomic Layer Etching In The Semiconductor Industry
By Lam Research - 21 Jan, 2016 - Comments: 0

Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-sca... » read more

Will 5nm Happen?
By Mark LaPedus - 20 Jan, 2016 - Comments: 7

Chipmakers are ramping up their 16/14nm finFET processes, with 10nm finFETs expected to ship sometime in late 2016 or early 2017. So what’s next? The foundries can see a path to extend the finFET transistor to 7nm, but the next node, 5nm, is far from certain and may never happen. Indeed, there are several technical and economic challenges at 5nm. And even if 5nm happens, only a few compani... » read more

Inside Inspection And Metrology
By Mark LaPedus - 18 Dec, 2015 - Comments: 0

Semiconductor Engineering sat down to talk about inspection, metrology and other issues with Mehdi Vaez-Iravani, vice president of advanced imaging technologies at Applied Materials. What follows are excerpts of that conversation. SE: Today, the industry is working on a new range of complex architectures, such as 3D NAND and finFETs. For these technologies, the industry is clearly struggling... » read more

New Options For Power
By Ed Sperling - 10 Sep, 2015 - Comments: 0

Chipmakers have been talking for years about the next big breakthrough in battery technology, low-power architectures and energy harvesting. So far, none of them has made their job any easier. Batteries empty out too quickly, and the technology for improving the amount of energy that can be stored don't improve fast enough—or safely enough when they do show big improvements—to make a big... » read more

What Works After 7nm?
By Mark LaPedus - 20 Aug, 2015 - Comments: 3

An Steegen, senior vice president of process technology at [getentity id="22217" e_name="Imec"], the Belgium-based R&D organization, sat down with Semiconductor Engineering to discuss the future of process technology and transistor trends all the way to 3nm. SE: Some say the semiconductor industry is maturing. Yet we have more device types and options than ever before, right? Steegen:... » read more

Pathfinding Beyond 10nm
By Paula Doe - 10 Aug, 2015 - Comments: 0

After higher aspect-ratio finFETs and higher mobility SiGe and III-V materials, the industry will move to lateral nanowires and then to vertical nanowire transistors, and to new tunnel junction FETs or spin wave architectures ─ or to various combinations of these technologies for different applications, reported An Steegan, Imec senior vice president of process technology, during SEMICON West... » read more

Here Comes 7nm
By Ed Sperling - 09 Jul, 2015 - Comments: 0

A consortium of companies involving IBM, GlobalFoundries and Samsung has rolled out the first 7nm test chip using silicon germanium as a substrate, using EUV to pattern multiple layers. While this doesn't mean the cost equation is even close to being solved, or that more than a handful of companies will push forward to that node anytime soon using SiGe as the substrate material, it does cre... » read more

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