Finely Tuning The Electronic Band Structure of WSe2 With AFM


A technical paper titled “Strain Driven Electrical Bandgap Tuning of Atomically Thin WSe2” was published by researchers at University of Toronto, University of Tokyo,  and Stanford University. Abstract: "Tuning electrical properties of 2D materials through mechanical strain has predominantly focused on n-type 2D materials like MoS2 and WS2, while p-type 2D materials such as WSe2 remain... » read more

The Importance Of Power Conversion Technologies In The Production Of Green Hydrogen


Global demand for green hydrogen is high and rising fast. Some studies predict that the electrical power demand to produce green hydrogen will be 4500 GW by 2050, compared to today’s (2023) electrical power demand of around 25 GW. This exponential growth will be fueled by green hydrogen which will reduce the carbon footprint of existing industries that use hydrogen as a feedstock, and by the ... » read more

High-Temp, High-Electron Mobility MOSFETs Based On N-Type Diamond


A new technical paper titled "High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond" was published by researchers at National Institute for Materials Science (Japan). Abstract: "Diamond holds the highest figure-of-merits among all the known semiconductors for next-generation electronic devices far beyond the performance of c... » read more

Research Bits: Mar. 19


Superconducting loops Researchers from University of California San Diego and University of California Riverside propose using superconducting loops to store and transmit information in a method similar to the human brain. “Our brains have this remarkable gift of associative memory, which we don't really understand,” said Robert C. Dynes, professor of physics at UC San Diego and preside... » read more

GAA NSFETs: ML for Device and Circuit Modeling


A new technical paper titled "A Comprehensive Technique Based on Machine Learning for Device and Circuit Modeling of Gate-All-Around Nanosheet Transistors" was published by researchers at National Yang Ming Chiao Tung University. Abstract (excerpt) "Machine learning (ML) is poised to play an important part in advancing the predicting capability in semiconductor device compact modeling domai... » read more

Optimizing Metal Film Measurement On IGBT And MOSFET Power Devices With Picosecond Ultrasonic Technology


By Johnny Dai with Cheolkyu Kim and Priya Mukundhan In recent years, power semiconductor applications have expanded from industrial and consumer electronics to renewable energy and electric vehicles. Looking to the future, the most promising power semiconductor devices will be insulated gate bipolar transistor (IGBT) and power metal oxide semiconductor field effect transistor (power MOSFET) ... » read more

Estimating the Embedded Gate Resistance to Reproduce SiC MOSFET Circuit Performance (ROHM)


A technical paper titled “Improved Scheme for Estimating the Embedded Gate Resistance to Reproduce SiC MOSFET Circuit Performance” was published by researchers at ROHM Company. Abstract: "The intrinsic gate resistance ( Rg_in) , which is a novel resistance factor embedded in transistors, was determined for silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFE... » read more

Search Based Method For Identifying Aging Model Parameters


A technical paper titled “Leveraging Public Information to Fit a Compact Hot Carrier Injection Model to a Target Technology” was published by researchers at University of Victoria. Abstract: "The design of countermeasures against integrated circuit counterfeit recycling requires the ability to simulate aging in CMOS devices. Electronic design automation tools commonly provide this ability... » read more

Testing Devices In Module Packages And Designing Cryogenic Current Sensors For All-Electric Aircraft


A technical paper titled “Characterizing semiconductor devices for all-electric aircraft” was published by researchers at University of Strathclyde (Glasgow) and Airbus UpNext. Abstract: "Cryogenic propulsion with hydrogen fuel cells replacing fossil fuels is a promising solution to cut carbon emissions in the aviation sector. Hydrogen will also be used for cooling the superconducting mac... » read more

SB MOSFET-Based Ultra-Low Power Real-Time Neurons for Neuromorphic Computing (Indian Institute of Technology)


A technical paper titled “Schottky Barrier MOSFET Enabled Ultra-Low Power Real-Time Neuron for Neuromorphic Computing” was published by researchers at the Indian Institute of Technology (IIT) Bombay. Abstract: "Energy-efficient real-time synapses and neurons are essential to enable large-scale neuromorphic computing. In this paper, we propose and demonstrate the Schottky-Barrier MOSFE... » read more

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