tag: MRAM

Journey From Cell-Aware To Device-Aware Testing Begins
By Laura Peters - 06 Jun, 2023 - Comments: 0

Early results of using device-aware testing on alternative memories show expanded test coverage, but this is just the start. Once the semiconductor industry realized that it was suffering from device failures even when test programs achieved 100% fault coverage, it went about addressing this disconnect between the way defects manifest themselves inside devices and the commonly used fault mod... » read more

Co-Design View of Cross-Bar Based Compute-In-Memory
By Technical Paper Link - 15 Mar, 2023 - Comments: 0

A new review paper titled "Compute in-Memory with Non-Volatile Elements for Neural Networks: A Review from a Co-Design Perspective" was published by researchers at Argonne National Lab, Purdue University, and Indian Institute of Technology Madras. "With an over-arching co-design viewpoint, this review assesses the use of cross-bar based CIM for neural networks, connecting the material proper... » read more

Scatterometry-Based Methodologies For Characterization Of MRAM Technology
By Nova - 18 Jan, 2023 - Comments: 0

Magnetoresistive random-access memory (MRAM) technology and recent developments in fabrication processes have shown it to be compatible with Si-based complementary metal oxide semiconductor (CMOS) technologies. The perpendicular spin transfer torque MRAM (STT-MRAM) configuration opened up opportunities for an ultra-dense MRAM evolution and was most widely adapted for its scalability. Insertion ... » read more

MTJ-based Circuits Provide Low-Cost, Energy Efficient Solution For Future Hardware Implementation in SC Algorithms
By Technical Paper Link - 30 Dec, 2022 - Comments: 0

A review paper titled "Review of Magnetic Tunnel Junctions for Stochastic Computing" was published by researchers at University of Minnesota Twin Cities. Funding agencies include Semiconductor Research Corporation (SRC), CAPSL, NIST, DARPA and others. Abstract: "Modern computing schemes require large circuit areas and large energy consumption for neuromorphic computing applications, such as... » read more

High Performance Memory: Novel Lateral Double Magnetic Tunnel Junction (MTJ) With An Orthogonal Polarizer
By Technical Paper Link - 17 Nov, 2022 - Comments: 0

A new technical paper titled "Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory" was published by researchers at Hanyang University. Find the technical paper here. Published November 2022. Sin, S., Oh, S. Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory.... » read more

Edge-AI Hardware for Extended Reality
By Technical Paper Link - 20 Jul, 2022 - Comments: 0

New technical paper titled "Memory-Oriented Design-Space Exploration of Edge-AI Hardware for XR Applications" from researchers at Indian Institute of Technology Delhi and Reality Labs Research, Meta. Abstract "Low-Power Edge-AI capabilities are essential for on-device extended reality (XR) applications to support the vision of Metaverse. In this work, we investigate two representative XR w... » read more

3 Emerging Technologies: Memristors, Spintronics & 2D Materials
By Technical Paper Link - 06 Jul, 2022 - Comments: 0

New technical paper titled "Memristive, Spintronic, and 2D-Materials-Based Devices to Improve and Complement Computing Hardware" from researchers at University College London and University of Cambridge. Abstract "In a data-driven economy, virtually all industries benefit from advances in information technology—powerful computing systems are critically important for rapid technological pr... » read more

SOT-MRAM-based CIM architecture for a CNN model
By Technical Paper Link - 09 May, 2022 - Comments: 0

New research paper "In-Memory Computing Architecture for a Convolutional Neural Network Based on Spin Orbit Torque MRAM", from National Taiwan University, Feng Chia University, Chung Yuan Christian University. Abstract "Recently, numerous studies have investigated computing in-memory (CIM) architectures for neural networks to overcome memory bottlenecks. Because of its low delay, high energ... » read more

CXL and OMI: Competing or Complementary?
By Bryon Moyer - 23 Mar, 2022 - Comments: 1

System designers are looking at any ideas they can find to increase memory bandwidth and capacity, focusing on everything from improvements in memory to new types of memory. But higher-level architectural changes can help to fulfill both needs, even as memory types are abstracted away from CPUs. Two new protocols are helping to make this possible, CXL and OMI. But there is a looming question... » read more

A crossbar array of magnetoresistive memory devices for in-memory computing
By Technical Paper Link - 14 Jan, 2022 - Comments: 0

Samsung has demonstrated the world’s first in-memory computing technology based on MRAM. Samsung has a paper on the subject in Nature. This paper showcases Samsung’s effort to merge memory and system semiconductors for next-generation artificial intelligence (AI) chips. Abstract "Implementations of artificial neural networks that borrow analogue techniques could potentially offer low-po... » read more

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