Week In Review: Manufacturing, Test

By Mark LaPedus - 22 Mar, 2019 - Comments: 0

Chipmakers TrendForce released its foundry rankings for the first quarter of 2019. TSMC is still the clear leader, followed in order by Samsung, GlobalFoundries and UMC, according to the firm. It was a tough quarter for all foundries. Samsung has rolled out its new High Bandwidth Memory (HBM2E) product. The new solution, called Flashbolt, is the industry’s first HBM2E to deliver a 3.2Gbps... » read more

Slow And Cautious Start To 2019 For Memory Manufacturers

By Adrienne Downey - 21 Mar, 2019 - Comments: 0

Both NAND and DRAM prices began dropping in the second half of 2018 after a couple years at record highs. Product oversupply and excess inventories are signaling a bleak outlook for the memory market in the first half of 2019. With these conditions in mind, SK Hynix and Samsung have slowed or put on hold their plans for capacity expansion in 2H18 and 2019. The chart below shows DRAM capacity... » read more

Memory Tradeoffs Intensify in AI, Automotive Applications

By Ann Mutschler - 14 Mar, 2019 - Comments: 0

The push to do more processing at the edge is putting a strain on memory design, use models and configurations, leading to some complex tradeoffs in designs across a variety of markets. The problem is these architectures are evolving alongside these new markets, and it isn't always clear how data will move across these chips, between devices, and between systems. Chip architectures are becom... » read more

The Importance Of Using The Right DDR SDRAM Memory

By Vadhiraj Sankaranarayanan - 14 Mar, 2019 - Comments: 0

Selecting the right memory technology is often the most critical decision for achieving the optimal system performance. Designers continue to add more cores and functionality to their SoCs; however, increasing performance while keeping power consumption low and silicon footprint small remains a vital goal. DDR SDRAMs, DRAMs in short, meet these memory requirements by offering a dense, high-perf... » read more

GDDR6: Signal Integrity Challenges For Automotive Systems

By Frank Ferro - 14 Mar, 2019 - Comments: 0

Signal integrity (SI) is at the forefront of SoC and system designers’ thinking as they plan for upcoming high-speed GDDR6 DRAM and PHY implementations for automotive and advanced driver assistance system (ADAS) applications. Rambus and its partners are closely looking at how GDDR6’s 16 gigabit per second speed at each pin affects signal integrity given the cost and system constraints for a... » read more

Inference Acceleration: Follow The Memory

By Geoff Tate - 07 Mar, 2019 - Comments: 0

Much has been written about the computational complexity of inference acceleration: very large matrix multiplies for fully-connected layers and huge numbers of 3x3 convolutions across megapixel images, both of which require many thousands of MACs (multiplier-accumulators) to achieve high throughput for models like ResNet-50 and YOLOv3. The other side of the coin is managing the movement of d... » read more

Hidden Signals: The Memories And Interfaces Enabling IoT, 5G, And AI

By Rambus - 04 Mar, 2019 - Comments: 0

This IDC Technology Spotlight Report, sponsored by Rambus, highlights key, often hidden, memory and interface technologies that are enabling high performance electronic systems to serve the disruptive trends of the next decade like IoT, 5G, and Artificial Intelligence. The report discusses: Data and the importance of connectivity, both from the physical (analog) world to the digital wor... » read more

New Memory Options

By Ed Sperling - 28 Feb, 2019 - Comments: 0

Carlos Macián, eSilicon’s senior director of AI strategy and products, talks about how to utilize memory differently and reduce the movement of data in AI chips, and what impact that has on power and performance. https://youtu.be/wItp6wReVts » read more

Power/Performance Bits: Feb. 26

By Jesse Allen - 26 Feb, 2019 - Comments: 0

Integrated RRAM for edge AI Researchers at CEA-Leti and Stanford University have developed the first circuit integrating multiple-bit non-volatile Resistive RAM (RRAM) with silicon computing units, as well as new memory resiliency features that provide 2.3-times the capacity of existing RRAM. The proof-of-concept chip monolithically integrates two heterogeneous technologies: 18KB of on-chip... » read more

Creating Higher Density 3D NAND Structures

By Timothy Yang - 21 Feb, 2019 - Comments: 0

3D NAND flash memory has enabled a new generation of non-volatile solid-state storage useful in nearly every electronic device imaginable. 3D NAND can achieve data densities exceeding those of 2D NAND structures, even when fabricated on later generation technology nodes. The methods used to increase storage capacity come with potentially significant tradeoffs in memory storage, structural sta... » read more

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