Impact Of EUV Resist Thickness On Local Critical Dimension Uniformities For <30nm CD Via Patterning


This paper describes the impact of extreme ultraviolet (EUV) resist thickness on <30 nm via local critical dimension uniformity (LCDU) measured during after development inspection (ADI) and after etch inspection (AEI). For the same post-etch CD targets, increasing resist thickness from 40 to 60 nm helped reduced CD variability. This work was performed via virtual fabrication using Coventor... » read more

The Impact Of EUV Resist Thickness On Via Patterning Uniformity


Via patterning at advanced nodes requires extremely low critical dimension (CD) values, typically below 30nm. Controlling these dimensions is a serious challenge, since there are many inherent sources of variation during lithography and etch processing. Coventor personnel, in conjunction with our colleagues from ASML and imec, recently looked at the impact of Extreme Ultraviolet lithography (EU... » read more

The Week In Review: IoT


Connectivity M1 Limited of Singapore worked with Nokia to launch a nationwide narrowband Internet of Things network, targeting such applications as asset tracking, environmental monitoring, fleet management, and smart energy management for buildings. M1 hopes to boost the IoT ecosystem in Singapore with the new NB-IoT network. M&A DuPont has agreed to acquire Granular, a provider of digita... » read more