tag: AFM

Metrology Advances Step Up To Sub-2nm Device Node Needs
By Laura Peters - 15 Oct, 2024 - Comments: 0

Metrology and inspection are dealing with a slew of issues tied to 3D measurements, buried defects, and higher sensitivity as device features continue to shrink to 2nm and below. This is made even more challenging due to increasing pressure to ramp new processes more quickly. Metrology tool suppliers must exceed current needs by a process node or two to ensure solutions are ready to meet tig... » read more

Gold Substrate Plays Boosts Performance of Tellurium-Based Memristors
By Technical Paper Link - 06 Oct, 2024 - Comments: 0

A new technical paper titled "Non-Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold" was published by researchers at Politecnico di Milano, UT Austin, and STMicroelectronics. Abstract: "Two-dimensional (2D) materials are promising for resistive switching in neuromorphic and in-memory computing, as their atomic thickness substantially impr... » read more

Relative Humidity in Conductive Atomic Force Microscopy (KAUST)
By Technical Paper Link - 11 Sep, 2024 - Comments: 0

A new technical paper titled "The Effect of Relative Humidity in Conductive Atomic Force Microscopy" was published by researchers at KAUST. Abstract "Conductive atomic force microscopy (CAFM) analyzes electronic phenomena in materials and devices with nanoscale lateral resolution, and it is widely used by companies, research institutions, and universities. Most data published in the field o... » read more

Steps to Fabricate Nanotips Overhanging From Chip Edge By a Few Micrometers (CNRS, CEA-Leti)
By Technical Paper Link - 10 Sep, 2024 - Comments: 0

A new technical paper titled "Suspended tip overhanging from chip edge for atomic force microscopy with an optomechanical resonator" was published by researchers at Lab. d'Analyse et d'Architecture des Systèmes du CNRS and CEA-LETI. Abstract Raising the mechanical frequency of atomic force microscopy (AFM) probes to increase the measurement bandwidth has been a long-standing expectation in... » read more

Finely Tuning The Electronic Band Structure of WSe2 With AFM
By Technical Paper Link - 08 Jul, 2024 - Comments: 0

A technical paper titled “Strain Driven Electrical Bandgap Tuning of Atomically Thin WSe2” was published by researchers at University of Toronto, University of Tokyo,  and Stanford University. Abstract: "Tuning electrical properties of 2D materials through mechanical strain has predominantly focused on n-type 2D materials like MoS2 and WS2, while p-type 2D materials such as WSe2 remain... » read more

Electrically Controlled All-AFM Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance (Northwestern)
By Technical Paper Link - 02 Apr, 2024 - Comments: 0

A new technical paper titled "Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance" was published by researchers at Northwestern University, Universitat Jaume, California State University Northridge, Argonne National Lab, Politecnico diBari, and University of Messina. Abstract "Antiferromagnetic (AFM) materials are a pathway... » read more

Closing The Test And Metrology Gap In 3D-IC Packages
By Gregory Haley - 12 Dec, 2023 - Comments: 0

The industry is investing in more precise and productive inspection and testing to enable advanced packages and eventually, 3D ICs. The next generations of aerospace, automotive, smartphone, and wearable tech most likely will be powered by multiple layers of intricately connected silicon, a stark departure from the planar landscapes of traditional integrated circuits. These 3D-ICs, compos... » read more

Navigating the Metrology Maze For GAA FETs
By Gregory Haley - 08 Aug, 2023 - Comments: 1

The chip industry is pushing the boundaries of innovation with the evolution of finFETs to gate-all-around (GAA) nanosheet transistors at the 3nm node and beyond, but it also is adding significant new metrology challenges. GAA represents a significant advancement in transistor architecture, where the gate material fully encompasses the nanosheet channel. This approach allows for the vertical... » read more

From Lab To Fab: Increasing Pressure To Fuse IC Processes
By Gregory Haley - 06 Jun, 2023 - Comments: 0

Test, metrology, and inspection are essential for both the lab and the fab, but fusing them together so that data created in one is easily transferred to the other is a massive challenge. The chip industry has been striving to bridge these separate worlds for years, but the economics, speed, and complexity of change require a new approach. The never-ending push toward smaller, better-defined... » read more

Latest Discoveries in the Mechanics of 2D Materials
By Technical Paper Link - 31 May, 2023 - Comments: 0

A new technical paper titled "Recent advances in the mechanics of 2D materials" was published by researchers at McGill University, University of Science and Technology of China, and University of Illinois. "We review significant advances in the understanding of the elastic properties, in-plane failures, fatigue performance, interfacial shear/friction, and adhesion behavior of 2D materials. I... » read more

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