3-Channel Package-Scale Galvanic Isolation Interface for SiC and GaN Power Switching Converters


A new technical paper titled "A Three-Channel Package-Scale Galvanic Isolation Interface for Wide Bandgap Gate Drivers" was published by STMicroelectronics and DIEEI, Università di Catania. Abstract "This article presents the design of a three-channel package-scale galvanic isolation interface for SiC and GaN power switching converters. The isolation interface consists of two side-by-sid... » read more

Tech Talk: Substrate Noise Coupling


Roland Jancke, head of the department for design methodology for the Fraunhofer's Engineering of Adaptive Systems Division, talks with Semiconductor Engineering about the impact of substrate noise coupling on reliability of chips and how to deal with this issue. https://youtu.be/7E2rCwYr6-o » read more