Metal Oxide Resist (MOR) EUV Lithography Processes For DRAM Application

By TEL - 19 Oct, 2022 - Comments: 0

This paper reports the readiness of key EUV resist process technologies using Metal Oxide Resist (MOR) aiming for the DRAM application. For MOR, metal contamination reduction and CD uniformity (CDU) are the key performance requirements expected concerning post exposure bake (PEB). Based on years of experience with spin-on type Inpria MOR, we have designed a new PEB oven to achieve contamination... » read more

Chemistry Working For Lithography: The Marangoni-Effect-Based Single Layer For Enhanced Planarization

By Brewer Science - 17 Nov, 2021 - Comments: 0

In the field of semiconductor manufacturing, there is still a continuous search for techniques to improve the Critical Dimension Uniformity (CDU) across the wafer. CDU improvement and general defectiveness reduction increase the industrial yield and guarantee high reliability standards. In the KrF Dual-Damascene module integration, at a lithographic level, deep trench planarization is mandatory... » read more

Comparative Stochastic Process Variation Bands For N7, N5, And N3 At EUV

By KLA - 21 Feb, 2019 - Comments: 0

By Alessandro Vaglio Preta, Trey Gravesa, David Blankenshipa, Kunlun Baib, Stewart Robertsona, Peter De Bisschopc, John J. Biaforea a) KLA-Tencor Corporation, Austin, TX 78759, U.S.A. b) KLA-Tencor Corporation, Milpitas, CA 95035, U.S.A. c) IMEC, Kapeldreef 75, 3000, BE ABSTRACT Stochastics effects are the ultimate limiter of optical lithography technology and are a major concern for n... » read more

Defect Detection Strategies and Process Partitioning for SE EUV Patterning

By IBM - 24 Jan, 2019 - Comments: 1

ABSTRACT The key challenge for enablement of a 2nd node of single-expose EUV patterning is understanding and mitigating the patterning-related defects that narrow the process window. Typical in-line inspection techniques, such as broadband plasma (291x) and e-beam systems, find it difficult to detect the main yield-detracting defects post-develop, and thus understanding the effects of process ... » read more

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tag: CDU

Metal Oxide Resist (MOR) EUV Lithography Processes For DRAM Application

Chemistry Working For Lithography: The Marangoni-Effect-Based Single Layer For Enhanced Planarization

Comparative Stochastic Process Variation Bands For N7, N5, And N3 At EUV

Defect Detection Strategies and Process Partitioning for SE EUV Patterning

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