Comparative Stochastic Process Variation Bands For N7, N5, And N3 At EUV


By Alessandro Vaglio Preta, Trey Gravesa, David Blankenshipa, Kunlun Baib, Stewart Robertsona, Peter De Bisschopc, John J. Biaforea a) KLA-Tencor Corporation, Austin, TX 78759, U.S.A. b) KLA-Tencor Corporation, Milpitas, CA 95035, U.S.A. c) IMEC, Kapeldreef 75, 3000, BE ABSTRACT Stochastics effects are the ultimate limiter of optical lithography technology and are a major concern for n... » read more

Defect Detection Strategies and Process Partitioning for SE EUV Patterning


ABSTRACT The key challenge for enablement of a 2nd node of single-expose EUV patterning is understanding and mitigating the patterning-related defects that narrow the process window. Typical in-line inspection techniques, such as broadband plasma (291x) and e-beam systems, find it difficult to detect the main yield-detracting defects post-develop, and thus understanding the effects of process ... » read more