Power/Performance Bits: Oct. 5

Modeling resistive-switching memory Researchers from Singapore University of Technology and Design (SUTD) and Chang Gung University developed a new toolkit for modeling current in resistive-switching memory devices. The team said that traditional physical-based models need to consider complex behaviors to model current in resistive memory, and there's a risk of permanent device damage due t... » read more

Modeling electrical conduction in resistive-switching memory through machine learning

Published in AIP Advances on July 13, 2021. Read the full paper (open access). Abstract Traditional physical-based models have generally been used to model the resistive-switching behavior of resistive-switching memory (RSM). Recently, vacancy-based conduction-filament (CF) growth models have been used to model device characteristics of a wide range of RSM devices. However, few have focused o... » read more