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Power/Performance Bits: Dec. 7


Logic-in-memory with MoS2 Engineers at École Polytechnique Fédérale de Lausanne (EPFL) built a logic-in-memory device using molybdenum disulfide (MoS2) as the channel material. MoS2 is a three-atom-thick 2D material and excellent semiconductor. The new chip is based on floating-gate field-effect transistors (FGFETs) that can hold electric charges for long periods. MoS2 is particularly se... » read more

Spiking Neural Networks Place Data In Time


Artificial neural networks have found a variety of commercial applications, from facial recognition to recommendation engines. Compute-in-memory accelerators seek to improve the computational efficiency of these networks by helping to overcome the von Neumann bottleneck. But the success of artificial neural networks also highlights their inadequacies. They replicate only a small subset of th... » read more

Compute-In Memory Accelerators Up-End Network Design Tradeoffs


An explosion in the amount of data, coupled with the negative impact on performance and power for moving that data, is rekindling interest around in-memory processing as an alternative to moving data back and forth between the memory and the processor. Compute-in-memory (CIM) arrays based on either conventional memory elements like DRAM and NAND flash, as well as emerging non-volatile memori... » read more