Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis

Abstract "Resistance switching in metal–insulator–metal structures has been extensively studied in recent years for use as synaptic elements for neuromorphic computing and as nonvolatile memory elements. However, high switching power requirements, device variabilities, and considerable trade-offs between low operating voltages, high on/off ratios, and low leakage have limited their utility... » read more

NVM Reliability Challenges And Tradeoffs

This second of two parts looks at different memories and possible solutions. Part one can be found here. While various NVM technologies, such as PCRAM, MRAM, ReRAM and NRAM share similar high-level traits, their physical renderings are quite different. That provides each with its own set of challenges and solutions. PCRAM has had a fraught history. Initially released by Samsung, Micron, a... » read more

Toward Neuromorphic Designs

Part one of this series considered the mechanisms of learning and memory in biological brains. Each neuron has many fibers, which connect to adjacent neurons at synapses. The concentration of ions such as potassium and calcium inside the cell is different from the concentration outside. The cellular membrane thus serves as a capacitor. When a stimulus is received, the neuron releases neur... » read more