Manufacturing Bits: Feb. 25


Diamond finFETs HRL Laboratories has made new and significant progress to develop diamond finFETs. HRL, a joint R&D venture between Boeing and General Motors, has developed a new ohmic regrowth technique for diamond FETs. This in turn could pave the way towards commercial diamond FETs. Applications include spacecraft, satellites and systems with extreme temperatures. Still in R&D, diamo... » read more

Manufacturing Bits: Dec. 23


Gallium oxide transistors At the recent IEEE International Electron Devices Meeting (IEDM), Cornell University and Hosei University presented a paper on a gallium oxide vertical transistor with a record breakdown voltage. Crystalline beta gallium oxide is a promising wide bandgap semiconductor material, which is used for power semiconductor applications. Gallium oxide has a large bandgap of... » read more

Power/Performance Bits: Nov. 25


Rigid or flexible in one device Researchers at the Korea Advanced Institute of Science and Technology (KAIST), Electronics and Telecommunications Research Institute (ETRI) in Daejeon, University of Colorado Boulder, Washington University in St. Louis, Cornell University, and Georgia Institute of Technology proposed a system that would allow electronics to transform from stiff devices to flexib... » read more

Week In Review: Manufacturing, Test


Market research What’s the CapEx outlook for 2020? Semiconductor capital spending is down in 2019, but the industry faces another slump in 2020, according to IC Insights. The firm sees a 15% decline in CapEx for 2019 with a 5% drop expected in 2020. New 300mm fab construction in Korea is still going strong despite the memory downturn, according to SEMI. “Korea’s fab construction spen... » read more

Power/Performance Bits: June 4


Flexible high-temp dielectric Researchers at Rice University, Georgia Institute of Technology, and Cornell University developed a new high-temperature dielectric nanocomposite for flexible electronics, energy storage, and electric devices that combines one-dimensional polymer nanofibers and two-dimensional boron nitride nanosheets. The polymer nanofibers act as a structural reinforcement, w... » read more

System Bits: May 28


Home robotics get cozier Cornell University’s Guy Hoffman was perplexed when he first saw social robots in stores. “I noticed a lot of them had a very similar kind of feature – white and plasticky, designed like consumer electronic devices,” said Hoffman, assistant professor and the Mills Family Faculty Fellow in the Sibley School of Mechanical and Aerospace Engineering. “Especial... » read more

System Bits: April 2


Transparent film is stronger than aluminum Professor Ton Peijs of WMG at the University of Warwick and Professor Cees Bastiaansen at Queen Mary University of London came up with a new processing technique that produces a transparent polythene film said to be stronger than aluminum. The film could be used in displays, glazing, visors, and windshields, without adding significant weight. The d... » read more

System Bits: March 26


Swear to tell the truth Lots of lies are told on the Internet. Shuyuan Ho of Florida State University wants to unveil those falsehoods with an online polygraph. “The future of my research is an online polygraph that could be used many different ways,” said Ho, an associate professor in the College of Communication and Information. “You could use it for online dating, Facebook, Twitter... » read more

Week in Review: IoT, Security, Auto


Internet of Things Internet of Things vendors and providers of network services need to collaborate to fully realize the possibilities presented by the IoT, Chris Martin of PowWowNow writes. “The potential applications for IoT sensors and devices span a vast number of industries, with IoT technologies expediting the growth of smart cities, autonomous vehicles and connected industry technolog... » read more

Manufacturing Bits: Dec. 18


Gallium oxide breakthroughs Crystalline beta gallium oxide is a promising wide bandgap semiconductor material. It has a large bandgap of 4.8–4.9 eV with a high breakdown field of 8 MV/cm. The technology has a high voltage figure of merit, which is more than 3,000 times greater than silicon, more than 8 times greater than silicon carbide (SiC) and more than 4 times greater than that of... » read more

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