tag: Coventor

Integrating Process Models With TCAD Simulation…
By Jacky Huang - 23 Jan, 2017 - Comments: 2

Novel semiconductor technologies are creating complex process flows, which are needed to support the manufacturing of advanced 3D semiconductor structures. It can be helpful to model process flows, and their effect on a novel device, prior to physical fabrication. Process modeling is a technique that can predict the 3D structure of a device using an understanding of unit process steps. Durin... » read more

Transferring Skills Getting Harder
By Ed Sperling - 19 Jan, 2017 - Comments: 0

Rising complexity in developing chips at advanced nodes, and an almost perpetual barrage of new engineering challenges at each new node, are making it more difficult for everyone involved to maintain consistent skill levels across a growing number of interrelated technologies. The result is that engineers are being forced to specialize, but when they work with other engineers with different ... » read more

China Unveils Memory Plans
By Mark LaPedus - 19 Jan, 2017 - Comments: 2

Backed by billions of dollars in government funding, China in 2014 launched a major initiative to advance its domestic semiconductor, IC-packaging and other electronic sectors. So far, though, the results are mixed. China is making progress in IC-packaging, but the nation’s efforts to advance its domestic logic and memory sectors are still a work in progress. In fact, China has yet to achi... » read more

BEOL Issues At 10nm And 7nm (part 2)
By Ed Sperling - 04 Jan, 2017 - Comments: 3

Semiconductor Engineering sat down to discuss problems with the back end of line at leading-edge nodes with Craig Child, senior manager and deputy director for [getentity id="22819" e_name="GlobalFoundries'"] advanced technology development integration unit; Paul Besser, senior technology director at [getentity id="22820" comment="Lam Research"]; David Fried, CTO at [getentity id="22210" e_name... » read more

Foundries See Mixed Future
By Mark LaPedus - 21 Dec, 2016 - Comments: 1

Amid a tumultuous business environment, the silicon foundry industry is projected to see steady growth in a number of process segments in 2017. As in past years, the foundry market is expected to grow faster than the overall IC industry in 2017. But at the same time, the IC industry—the foundry customer base—continues to witness a frenetic wave of merger and acquisition activity. Basical... » read more

Uncertainty Grows For 5nm, 3nm
By Mark LaPedus - 19 Dec, 2016 - Comments: 4

As several chipmakers ramp up their 10nm finFET processes, with 7nm just around the corner, R&D has begun for 5nm and beyond. In fact, some are already moving full speed ahead in the arena. [getentity id="22586" comment="TSMC"] recently announced plans to build a new fab in Taiwan at a cost of $15.7 billion. The proposed fab is targeted to manufacture TSMC’s 5nm and 3nm processes, whic... » read more

BEOL Issues At 10nm And 7nm (Part 1)
By Ed Sperling - 15 Dec, 2016 - Comments: 5

Semiconductor Engineering sat down to discuss problems with the back end of line at leading-edge nodes with Craig Child, senior manager and deputy director for [getentity id="22819" e_name="GlobalFoundries'"] advanced technology development integration unit; Paul Besser, senior technology director at [getentity id="22820" comment="Lam Research"]; David Fried, CTO at [getentity id="22210" e_name... » read more

BEOL Barricades Ahead
By David Fried - 15 Dec, 2016 - Comments: 0

Coventor recently assembled an expert panel at IEDM 2016, to discuss changes to BEOL process technology that would be needed to continue dimensional scaling to 7 nm and lower. Among the questions posed to panelists: What is BEOL? Where does it begin and end? Are there fundamental limits to interconnect processes? How much longer can we continue to use current interconnect processes and ... » read more

Multi-Patterning Issues At 7nm, 5nm
By Ed Sperling - 28 Nov, 2016 - Comments: 13

Continuing to rely on 193nm immersion lithography with multiple patterning is becoming much more difficult at 7nm and 5nm. With the help of various resolution enhancement techniques, optical lithography using a deep ultraviolet excimer laser has been the workhorse patterning technology in the fab since the early 1980s. It is so closely tied with the continuation of [getkc id="74" comment="Mo... » read more

Can We Measure Next-Gen FinFETs?
By Mark LaPedus - 21 Nov, 2016 - Comments: 6

After ramping up their respective 16nm/14nm finFET processes, chipmakers are moving towards 10nm and/or 7nm, with 5nm in R&D. But as they move down the process roadmap, they will face a new set of fab challenges. In addition to lithography and interconnects, there is metrology. Metrology, the science of measurements, is used to characterize tiny films and structures. It helps to boost yi... » read more

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