tag: D2S

Where Is Next-Gen Lithography?
By Mark LaPedus - 31 Mar, 2016 - Comments: 2

Semiconductor Engineering sat down to discuss lithography and photomask technologies with Greg McIntyre, director of the Advanced Patterning Department at [getentity id="22217" comment="Imec"]; Harry Levinson, senior fellow and senior director of technology research at [getentity id="22819" comment="GlobalFoundries"]; Uday Mitra, vice president and head of strategy and marketing for the Etch Bu... » read more

GPU-Based Computing In Photomask Manufacturing
By Aki Fujimura - 28 Mar, 2016 - Comments: 0

Graphical-processing unit (GPU)-accelerated computing has reached maturity for professional, scientific computing applications. One example of this is the recent GPU-accelerated thermal application for semiconductor photomask manufacturing, which is used in 24/7 manufacturing environments. GPU-accelerated computing won’t be a universal panacea for the semiconductor industry’s “need for sp... » read more

Tech Talk: GPU-Accelerated Photomasks
By Ed Sperling - 22 Mar, 2016 - Comments: 0

Noriaki Nakayamada, group manager for the data control engineering group in NuFlare's Mask Lithography engineering Department, talks about what's changing on the mask side, where the trouble spots are, and how to deal with them at advanced process nodes. [youtube vid=f8PixJMadXw] » read more

The Week In Review: Manufacturing
By Mark LaPedus - 18 Mar, 2016 - Comments: 0

Intel announced that the company’s former CEO and chairman, Andrew Grove, passed away. He was 79. Present at Intel’s 1968 founding with Robert Noyce and Gordon Moore, Grove became Intel’s president in 1979 and CEO in 1987. He served as chairman from 1997 to 2005. “We are deeply saddened by the passing of former Intel Chairman and CEO Andy Grove,” said Intel CEO Brian Krzanich, in a st... » read more

Multi-Beam Market Heats Up
By Mark LaPedus - 17 Mar, 2016 - Comments: 3

The multi-beam e-beam mask writer business is heating up, as Intel and NuFlare have separately entered the emerging market. In one surprising move, [getentity id="22846" e_name="Intel"] is in the process of acquiring IMS Nanofabrication, a [gettech id="31058" t_name="multi-beam e-beam"] equipment vendor. And separately, e-beam giant NuFlare recently disclosed its new multi-beam mask writer t... » read more

Where Is Next-Gen Lithography?
By Mark LaPedus - 17 Mar, 2016 - Comments: 4

Semiconductor Engineering sat down to discuss lithography and photomask technologies with Greg McIntyre, director of the Advanced Patterning Department at [getentity id="22217" comment="Imec"]; Harry Levinson, senior fellow and senior director of technology research at [getentity id="22819" comment="GlobalFoundries"]; Uday Mitra, vice president and head of strategy and marketing for the Etch Bu... » read more

The Week In Review: Manufacturing
By Mark LaPedus - 26 Feb, 2016 - Comments: 0

What was the mood at this week’s SPIE Litho? “EUV sentiment is improving among chipmakers as ASML makes progress toward HVM metrics; however, there is still much hedging around timing and readiness. We view EUV adoption as likely to be slow and gradual through 2020,” said Weston Twigg, an analyst with Pacific Crest Securities, in a report. “In order for ASML to hit the higher levels of ... » read more

1xnm DRAM Challenges
By Mark LaPedus - 18 Feb, 2016 - Comments: 3

At a recent event, Samsung presented a paper that described how the company plans to extend today’s planar DRAMs down to 20nm and beyond. This is an amazing feat. Until very recently, most engineers believed DRAMs would stop scaling at 20nm or so. Instead, Samsung is ramping up the world’s most advanced DRAMs—a line of 20nm parts—with plans to go even further. Micron and SK Hynix soo... » read more

5nm Fab Challenges
By Mark LaPedus - 21 Jan, 2016 - Comments: 2

At a recent event, Intel presented a paper that generated sparks and fueled speculation regarding the future direction of the leading-edge IC industry. The company described a next-generation transistor called the nanowire FET, which is a finFET turned on its side with a gate wrapped around it. Intel’s nanowire FET, sometimes called a gate-all-around FET, is said to meet the device require... » read more

Predictions For 2016: Semiconductors, Manufacturing And Design
By Brian Bailey - 21 Jan, 2016 - Comments: 0

Seventeen companies sent in their predictions for this year with some of them sending predictions from several people. This is in addition to the CEO predictions that were recently published. That is a fine crop of views for the coming year, especially since they know that they will be held accountable for their views and this year, just like the last, they will have to answer for them. We beli... » read more

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