tag: DDR4

Chiplet Tradeoffs And Limitations
By Ann Mutschler - 10 Apr, 2025 - Comments: 0

The semiconductor industry is buzzing with the benefits of chiplets, including faster time to market, better performance, and lower power, but finding the correct balance between customization and standardization is proving to be more difficult than initially thought. For a commercial chiplet marketplace to really take off, it requires a much deeper understanding of how chiplets behave indiv... » read more

Experimental Characterization Results and State-of-the-Art Device-Level Studies of DRAM Read Disturbance
By Technical Paper Link - 25 Mar, 2025 - Comments: 1

A new technical paper titled "Revisiting DRAM Read Disturbance: Identifying Inconsistencies Between Experimental Characterization and Device-Level Studies" was published by researchers at ETH Zurich. Abstract "Modern DRAM is vulnerable to read disturbance (e.g., RowHammer and RowPress) that significantly undermines the robust operation of the system. Repeatedly opening and closing a DRAM ro... » read more

Temporal Variation in DRAM Read Disturbance in DDR4 and HBM2 (ETH Zurich, Rutgers)
By Technical Paper Link - 19 Feb, 2025 - Comments: 0

A new technical paper titled "Variable Read Disturbance: An Experimental Analysis of Temporal Variation in DRAM Read Disturbance" was published by researchers at ETH Zurich and Rutgers University. Abstract "Modern DRAM chips are subject to read disturbance errors. State-of-the-art read disturbance mitigations rely on accurate and exhaustive characterization of the read disturbance threshold... » read more

Memory System Benchmarking, Simulation, And Application Profiling Via A Memory Stress Framework
By Technical Paper Link - 22 May, 2024 - Comments: 0

A technical paper titled “A Mess of Memory System Benchmarking, Simulation and Application Profiling” was published by researchers at Barcelona Supercomputing Center, Unversitat Politecnica de Catalunya, and Micron Technology (Italy). Abstract: "The Memory stress (Mess) framework provides a unified view of the memory system benchmarking, simulation and application profiling. The Mess benc... » read more

Rowhammer Exploitation On AMD Platforms, DDR4 DDR5 (ETH Zurich)
By Technical Paper Link - 03 Apr, 2024 - Comments: 0

A new technical paper titled "ZenHammer: Rowhammer Attacks on AMD Zen-based Platforms" was published by researchers at ETH Zurich. The work will be presented at USENIX Security Symposium in August 2024. Abstract: "AMD has gained a significant market share in recent years with the introduction of the Zen microarchitecture. While there are many recent Rowhammer attacks launched from Intel CPU... » read more

DRAM Chip Characterization Study of Spatial Variation of Read Disturbance and Future Solutions (ETH Zurich)
By Technical Paper Link - 15 Mar, 2024 - Comments: 0

A new technical paper titled "Spatial Variation-Aware Read Disturbance Defenses: Experimental Analysis of Real DRAM Chips and Implications on Future Solutions" was published by researchers at ETH Zurich. Abstract: "Read disturbance in modern DRAM chips is a widespread phenomenon and is reliably used for breaking memory isolation, a fundamental building block for building robust systems. Row... » read more

How To Stop Row Hammer Attacks
By Ed Sperling - 30 Jan, 2024 - Comments: 0

Row hammer is a well-publicized target for cyberattacks on DRAM, and there have been attempts to stop these attacks in DDR4 and DDR5, but with mixed results. The problem is that as density increases, distance decreases, making it more likely that flipped bit cell in one row can disturb a bit cell in another, and that bits flipped across an entire row can flip another row. Steven Woo, fellow and... » read more

DDR Memory Test Challenges From DDR3 to DDR5
By Keysight - 21 Sep, 2022 - Comments: 0

Cloud, networking, enterprise, high-performance computing, big data, and artificial intelligence are propelling the development of double data rate (DDR) memory chip technology. Demand for lower power requirements, higher density for more memory storage, and faster transfer speeds are constant. Servers drive the demand for next-generation DDR. Consumers benefit when existing and legacy generati... » read more

An Escalation of Rowhammer To Rows Beyond Immediate Neighbors
By Technical Paper Link - 15 Aug, 2022 - Comments: 0

Researchers at Graz University of Technology, Lamarr Security Research, Google, AWS, and Rivos presented this new technical paper titled "Half-Double: Hammering From the Next Row Over" at the USENIX Security Symposium in Boston in August 2022. Abstract: "Rowhammer is a vulnerability in modern DRAM where repeated accesses to one row (the aggressor) give off electrical disturbance whose cumu... » read more

ETH Zurich Introduces ProTRR, in-DRAM Rowhammer Mitigation
By Technical Paper Link - 30 May, 2022 - Comments: 0

New technical paper titled "PROTRR: Principled yet Optimal In-DRAM Target Row Refresh" from ETH Zurich. The paper was presented at the 43rd IEEE Symposium on Security and Privacy (SP 2022), San Francisco, CA, USA, May 22–26, 2022. This new paper introduces ProTRR, an "in-DRAM Rowhammer mitigation that is secure against FEINTING, a novel Rowhammer attack." The related video presentation can... » read more

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