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ETH Zurich Introduces ProTRR, in-DRAM Rowhammer Mitigation


New technical paper titled "PROTRR: Principled yet Optimal In-DRAM Target Row Refresh" from ETH Zurich. The paper was presented at the 43rd IEEE Symposium on Security and Privacy (SP 2022), San Francisco, CA, USA, May 22–26, 2022. This new paper introduces ProTRR, an "in-DRAM Rowhammer mitigation that is secure against FEINTING, a novel Rowhammer attack." The related video presentation can... » read more

QUAC-TRNG: High-Throughput True Random Number Generation Using Quadruple Row Activation in Commodity DRAM Chips


Abstract "True random number generators (TRNG) sample random physical processes to create large amounts of random numbers for various use cases, including security-critical cryptographic primitives, scientific simulations, machine learning applications, and even recreational entertainment. Unfortunately, not every computing system is equipped with dedicated TRNG hardware, limiting the applicat... » read more

SMASH: Synchronized Many-sided Rowhammer Attacks from JavaScript


Authors: Finn de Ridder, ETH Zurich and VU Amsterdam; Pietro Frigo, Emanuele Vannacci, Herbert Bos, and Cristiano Giuffrida, VU Amsterdam; Kaveh Razavi, ETH Zurich Abstract: "Despite their in-DRAM Target Row Refresh (TRR) mitigations, some of the most recent DDR4 modules are still vulnerable to many-sided Rowhammer bit flips. While these bit flips are exploitable from native code, tri... » read more

Data Center Evolution: DDR5 DIMMs Advance Server Performance


Driven by a confluence of megatrends, global data traffic is increasing at an exponential rate. For example, 5G networks are enabling billions of AI-powered IoT devices untethered from wired networks. Nowhere is the impact of all this growth being felt more intensely than in data centers. Indeed, hyperscale data centers have become the critical hubs of the global data network. DDR5 DRAM will en... » read more

DDR PHY Training


Brett Murdock, senior product marketing manager at Synopsys, explains how to train the DRAM physical layer using firmware, why that is so important for flexibility, and what kinds of issues engineers encounter when using this approach. » read more

Week In Review: Auto, Security, Pervasive Computing


AI/Edge The United States now has the highest number of COVID-19 cases, and the state governments in the U.S. are asking technologists for help, according to a story in The Washington Post. Data scientists, software developers, and others are needed to help. New York State started a Technology SWAT team calling for help from the tech community. Intel AI Builder program participant DarwinAI ... » read more

Enterprise-Class DRAM Reliability


Brett Murdock, product manager for memory interfaces at Synopsys, examines demand for DDR5 and DDR4 in both on-premise and cloud implementations, what features are available for which versions, how they affect performance and power, how ECC is implemented, and how the data moves throughout these systems. » read more

Understanding the Interactions of Workloads and DRAM Types: A Comprehensive Experimental Study


Abstract "It has become increasingly difficult to understand the complex interaction between modern applications and main memory, composed of DRAM chips. Manufacturers are now selling and proposing many different types of DRAM, with each DRAM type catering to different needs (e.g., high throughput, low power, high memory density). At the same time, the memory access patterns of prevalent and... » read more

What’s Next For High Bandwidth Memory


A surge in data is driving the need for new IC package types with more and faster memory in high-end systems. But there are a multitude of challenges on the memory, packaging and other fronts. In systems, for example, data moves back and forth between the processor and DRAM, which is the main memory for most chips. But at times this exchange causes latency and power consumption, sometimes re... » read more

Why DRAM Won’t Go Away


Semiconductor Engineering sat down to talk about DRAM's future with Frank Ferro, senior director of product management at Rambus; Marc Greenberg, group director for product marketing at Cadence; Graham Allan, senior product marketing manager for DDR PHYs at Synopsys; and Tien Shiah, senior manager for memory marketing at Samsung Electronics. What follows are excerpts of that conversation. Part ... » read more

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