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A Review on the Fabrication and Reliability of Three-Dimensional Integration Technologies for Microelectronic Packaging: Through-Si-via and Solder Bumping Process


Abstract "With the continuous miniaturization of electronic devices and the upcoming new technologies such as Artificial Intelligence (AI), Internet of Things (IoT), fifth-generation cellular networks (5G), etc., the electronics industry is achieving high-speed, high-performance, and high-density electronic packaging. Three-dimensional (3D) Si-chip stacking using through-Si-via (TSV) and sol... » read more

Effective Post-TSV-DRIE Wet Clean Process For Through Silicon Via Applications


Deep Reactive Ion Etch (DRIE) processes used to form through silicon vias (TSVs) achieve high aspect ratios by depositing polymer on the vertical sidewalls of the features. This polymer material must be removed before other materials (including dielectric liner, Cu barrier, and Cu) are deposited in the TSVs. Clean processes adapted from Cu damascene integration flows use a combination of oxygen... » read more

New Techniques To Analyze And Reduce Etch Variation


Time division multiplex (TDM) plasma etch processes (commonly referred to as Deep Reactive ION Etching [“DRIE”]) use alternating deposition and etch steps cyclically to produce high aspect ratio structures on a silicon substrate. These etch processes have been widely applied in the manufacturing of silicon MEMS devices, and more recently in creating through silicon vias in 3D silicon struct... » read more

The Trouble With MEMS


The advent of the Internet of Things will open up a slew of new opportunities for MEMS-based sensors, but chipmakers are proceeding cautiously. There are a number of reasons for that restraint. Microelectromechanical systems are difficult to design, manufacture and test, which initially fueled optimism in the MEMS ecosystem that this market would command the same kinds of premiums that analo... » read more