Research Bits: Feb. 24


Growing patterned diamond Researchers from Rice University developed a bottom-up microwave plasma chemical vapor deposition method for growing patterned diamond surfaces that could help decrease operating temperatures in electronics by 23 degrees Celsius. The team used two techniques for controlling seed crystal placement. Photolithography was used for small, detailed patterns. To scale up ... » read more

New Class Of Semiconductors Made Of Germanium-Tin Alloy (University of Edinburgh et al.)


A new technical paper "High Pressure and Compositionally Directed Route to a Hexagonal GeSn Alloy Class" was published by researchers at the University of Edinburgh, GFZ Helmholtz Centre for Geosciences, the University of Lille, Grenoble Alpes University, the University of Bayreuth and the European Synchrotron facility. Abstract "Despite their electronic dominance, cubic diamond structure... » read more

Platform for LN-Based Wavelength-Scale Integrated Phononic Waveguides On Diamond (Stanford, UCSB)


A new technical paper titled "Integrated phononic waveguide on thin-film lithium niobate on diamond" was published by researchers at Stanford University and UC Santa Barbara. Abstract "We demonstrate wavelength-scale phononic waveguides formed by transfer-printed thin-film lithium niobate (LN) on bulk diamond (LNOD), a material stack that combines the strong piezoelectricity of LN with the ... » read more

Research Bits: June 3


Imaging power electronics Researchers from the Institute of Science Tokyo, Harvard University, and Hitachi used diamond quantum sensors to analyze the magnetization response of soft magnetic materials used in power electronics. The method can simultaneously image both the amplitude and phase of AC stray fields over a wide frequency range up to 2.3 MHz. It uses a diamond quantum sensor with ... » read more

Strategies For Reducing The Effective GaN/Diamond TBR


A new technical paper titled "Thermal Boundary Resistance Reduction by Interfacial Nanopatterning for GaN-on-Diamond Electronics Applications" was published by researchers at University of Bristol, Cardiff University and Akash Systems. Abstract "GaN high electron mobility transistors (HEMTs) on SiC substrates are the highest performing commercially available transistors for high-power, hi... » read more

Research Bits: Feb. 4


High-power diamond transistors Researchers from the University of Glasgow, RMIT University, and Princeton University created a new diamond transistor for high-power electronics that remains switched off by default. The performance of the diamond was improved by coating it in hydrogen atoms followed by layers of aluminum oxide. “The challenge for power electronics is that the design of the... » read more

Research Bits: Dec. 24


Growing multilayered chips Researchers from MIT, Samsung Advanced Institute of Technology, Sungkyunkwan University, and University of Texas at Dallas developed a method to fabricate a multilayered chip with alternating layers of semiconducting material grown directly on top of each other. The approach enables high-performance transistors and memory and logic elements on any random crystalline ... » read more

Materials And Technologies For High Temperature, Resilient Electronics


A technical paper titled “Materials for High Temperature Digital Electronics” was published by researchers at University of Pennsylvania, Air Force Research Laboratory, and Ozark Integrated Circuits. Abstract: "Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportatio... » read more

Research Bits: December 11


Diamond device with high breakdown voltage Researchers from the University of Illinois at Urbana-Champaign developed diamond p-type lateral Schottky barrier diodes they say have the highest breakdown voltage and lowest leakage current compared to previous diamond devices. The diamond device can sustain high voltage, approximately 5 kV, although the voltage was limited by setup of measurement a... » read more

Research Bits: Aug. 7


Stretchy semiconductors Researchers from Pennsylvania State University, University of Houston, Southeast University, and Northwestern University are working towards fully flexible electronics. “Such technology requires stretchy elastic semiconductors, the core material needed to enable integrated circuits that are critical to the technology enabling our computers, phones and so much more,... » read more

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